Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/www.scientific.net/MSF.483-485

Paper Title Page

Authors: Adolf Schöner, Mietek Bakowski, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe

Abstract: Lateral MOSFET devices with varying size from a single unit cell to 3x3 mm2 containing 1980 unit cells have been realised using two basic...

801
Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda

Abstract: We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel...

805
Authors: H. Kawano, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami

Abstract: Optimum dose designing for 4H-SiC (0001) two-zone RESURF MOSFETs is investigated by device simulation and fabrication. Simulated results...

809
Authors: Shinsuke Harada, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai

Abstract: In our previous study, the on-resistance of the SiC-based vertical MOSFET had been reduced in double-epitaxial MOSFET (DEMOSFET). The device...

813
Authors: Eiichi Okuno, Takeshi Endo, Hideo Matsuki, Toshio Sakakibara, Hiroaki Tanaka

Abstract: In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel...

817
Authors: Masato Noborio, Y. Kanzaki, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami

Abstract: Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type...

821
Authors: Gheorghe Brezeanu, C. Boianceanu, M. Brezeanu, Andrej Mihaila, F. Udrea, G. Amaratunga

Abstract: The behavior of the MOS switch and of two cascode configurations are evaluated, by using OR-CAD simulations, and the resulting data are...

825
Authors: Tetsuo Hatakeyama, Takatoshi Watanabe, Junji Senzaki, Makoto Kato, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

Abstract: This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs...

829
Authors: G. Gudjónsson, H.Ö. Ólafsson, Fredrik Allerstam, Per Åke Nilsson, Einar Ö. Sveinbjörnsson, T. Rödle, R. Jos

Abstract: We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained...

833
Authors: Fredrik Allerstam, G. Gudjónsson, H.Ö. Ólafsson, Einar Ö. Sveinbjörnsson, T. Rödle, R. Jos

Abstract: Lateral inversion channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were manufactured on 6H-SiC and two gate oxidation...

837

Showing 191 to 200 of 255 Paper Titles