Paper Title
Authors: Tetsuo Hatakeyama, Johji Nishio, Takashi Shinohe
Abstract:This paper describes process and device simulation results of SiC floating junction Schottky barrier diodes (Super-SBDs). Two-dimensional...
Authors: Roland Rupp, Michael Treu, Peter Türkes, H. Beermann, Thomas Scherg, Herbert Preis, Hans Cerva
Abstract:Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected...
Authors: Xavier Jordá, Dominique Tournier, Jose Rebollo, José Millan, Phillippe Godignon
Abstract:SiC 600 V Schottky barrier diodes (SBD) are already available in the market and 1.2 kV have been announced. As the highest market for power...
Authors: R. Pierobon, G. Meneghesso, E. Zanoni, Fabrizio Roccaforte, Francesco La Via, Vito Raineri
Abstract:The static and dynamic electrical characterization of power Schottky rectifiers both with Ti and Ni2Si as Schottky metals having low negative...
Authors: Mattias Südow, Niklas Rorsman, Per Åke Nilsson, Herbert Zirath
Abstract:Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the...
Authors: M. Furno, F. Bonani, G. Ghione, Sergio Ferrero, Samuele Porro, P. Mandracci, Luciano Scaltrito, Denis Perrone, G. Richieri, Luigi Merlin
Abstract:We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on...
Authors: R. Pérez, Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Miquel Vellvehi
Abstract:In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed...
Authors: T. Ayalew, Sang Cheol Kim, T. Grasser, S. Selberherr
Authors: Tetsuya Hayashi, Hideaki Tanaka, Yoshio Shimoida, Satoshi Tanimoto, Masakatsu Hoshi
Abstract:We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is...
Authors: Z.J. Shen, X. Cheng, Beom Soo Kang, K. So, I. Hshieh
Abstract:In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown...
Showing 221 to 230 of 255 Paper Titles