Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Peter A. Losee, Can Hua Li, Joseph Seiler, Robert E. Stahlbush, T. Paul Chow, I. Bhat, Ronald J. Gutmann

Abstract: 4H-SiC pin diodes fabricated on epitaxial films grown in-house on various substrates along with devices fabricated on commercial...

Authors: Mrinal K. Das, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami, Adrian R. Powell

Abstract: The path to commericializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H-SiC PiN...

Authors: Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Katsunori Asano, R. Ishii

Abstract: The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation...

Authors: Pavel A. Ivanov, Michael E. Levinshtein, Tigran T. Mnatsakanov, John W. Palmour, Ranbir Singh, Kenneth G. Irvine, Mrinal K. Das

Abstract: Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC...

Authors: Dethard Peters, Rudolf Elpelt, Reinhold Schörner, Karl Otto Dohnke, Peter Friedrichs, Dietrich Stephani

Abstract: Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at...

Authors: Shuichi Ono, Manabu Arai, C. Kimura

Abstract: We fabricated a p+/n-/n+ 4H-SiC IMPATT diode with guard-ring termination. The p+ - layer and the guard-ring were formed by ion...

Authors: Yasunori Tanaka, Kazutoshi Kojima, Kazuto Takao, Mitsuo Okamoto, Megumi Kawasaki, Akio Takatsuka, Tsutomu Yatsuo, Kazuo Arai

Abstract: This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He+ ion implantation. In...

Authors: S.I. Maximenko, Stanislav I. Soloviev, A.E. Grekov, A.V. Bolotnikov, Ying Gao, Tangali S. Sudarshan

Abstract: The degradation of diffused SiC PIN diodes during forward-biased operation was studied by first fabricating PIN diodes by diffusion of...

Authors: Anatoly M. Strel'chuk, Evgenia V. Kalinina, Andrey O. Konstantinov, Anders Hallén

Abstract: The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of...

Authors: Mykola S. Boltovets, Volodymyr V. Basanets, Nicolas Camara, Valentyn A. Krivutsa, Konstantinos Zekentes

Abstract: The switching characteristics of 4Н-SiС p-i-n diodes with 6 µm long i-region were investigated in the 20÷500 °С temperature ranges. It is...


Showing 231 to 240 of 255 Paper Titles