Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Einar Ö. Sveinbjörnsson, H.Ö. Ólafsson, G. Gudjónsson, Fredrik Allerstam, Per Åke Nilsson, Mikael Syväjärvi, Rositza Yakimova, Christer Hallin, T. Rödle, R. Jos

Abstract: We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material....

Authors: T. Ayalew, T. Grasser, H. Kosina, S. Selberherr
Authors: C.L. Zhu, E. Rusli, J. Almira, Chin Che Tin, S.F. Yoon, J. Ahn

Abstract: The drain-induced barrier lowering (DIBL) effect in 4H-SiC MESFETs has been studied using the physical drift and diffusion model. Our...

Authors: Andrey O. Konstantinov, Chris I. Harris, I.C. Ray

Abstract: High impedance silicon carbide power RF transistors are reported, which use the technology of Lateral Epitaxy Metal-Semiconductor FET...

Authors: Rolf Jonsson, Staffan Rudner

Abstract: We have designed and characterized preliminary versions of two wideband SiC-based RF power amplifiers using SiC MESFETs from Chalmers...

Authors: Ho Young Cha, Y.C. Choi, Lester F. Eastman, Michael G. Spencer, L. Ardaravičius, A. Matulionis, O. Kiprijanovič

Abstract: Because SiC does not have velocity overshooting behaviour, the current density of SiC metal-semiconductor field-effect transistors (MESFETs)...

Authors: Jean Marie Bluet, M. Gassoumi, I. Dermoul, F. Chekir, H. Maaref, Gérard Guillot, Erwan Morvan, Christian Dua, Christian Brylinski

Abstract: Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed....

Authors: Yaroslav Koshka, Igor Sankin

Abstract: Quantitative assessment of the influence of deep traps in semiinsulating (SI) SiC substrates on transient behavior and substrate leakage...

Authors: Vladimir Ilich Sankin, Pavel P. Shkrebiy, Alexander A. Lebedev

Abstract: The dependence of short-circuit photo-current on the voltage applied to the source-gate (or drain-gate) junction Vg was studied. One should...

Authors: Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Konstantin Vassilevski, C. Mark Johnson

Showing 201 to 210 of 255 Paper Titles