Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Hideno Mikami, Yasutaka Horie, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Abstract: We study for the effects of additional gas such as oxygen (O2) and hydrogen (H2) into SF6. When H2 gas was added to SF6, surface fluoride...

Authors: S. Soubatch, Stephen E. Saddow, Shailaja P. Rao, W.Y. Lee, M. Konuma, Ulrich Starke

Abstract: Commercial on-axis wafers of 4H-SiC(0001) were etched in a standard reactor for chemical vapor deposition (CVD) using molecular hydrogen...

Authors: Jun Hai Xia, E. Rusli, R. Gopalakrishnan, S.F. Choy, Chin Che Tin, J. Ahn, S.F. Yoon

Abstract: Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main...

Authors: G. Sarov, T. Cholakova, Roumen Kakanakov

Abstract: This paper presents much more details on the process of etching n and p type SiC using a dc saddle field source. Here is described a method...

Authors: Nicolas Camara, Aurelie Thuaire, Edwige Bano, Konstantinos Zekentes

Abstract: The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial...

Authors: Wook Bahng, Geun Ho Song, Nam Kyun Kim, Sang Cheol Kim, Hyoung Wook Kim, K.S. Seo, Eun Dong Kim

Abstract: The effects of the damage induced during ion implantation on the surface roughening and oxide growth rate were investigated. Using several...

Authors: Igor Matko, Bernard Chenevier, Roland Madar, H. Roussel, Stephane Coindeau, Fabrice Letertre, Claire Richtarch, Lea Di Cioccio

Abstract: QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology....

Authors: R.Wayne Johnson, John R. Williams

Abstract: The challenges of packaging SiC power devices for high temperatures include high operating temperature, wide thermal cycle range, high...

Authors: Sang Cheol Kim, Wook Bahng, Nam Kyun Kim, Eun Dong Kim, T. Ayalew, T. Grasser, S. Selberherr

Abstract: We report the simulation results of 25µm half cell pitch vertical type 4H-SiC DiMOSFET using the general-purpose device simulator...

Authors: Sei Hyung Ryu, Sumi Krishnaswami, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour, James D. Scofield

Abstract: Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher...


Showing 181 to 190 of 255 Paper Titles