Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Satoshi Tanimoto, Hideaki Tanaka, Tetsuya Hayashi, Yoshio Shimoida, Masakatsu Hoshi, Teruyoshi Mihara

Abstract: Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been...

Authors: Kumaresan Ramanujam, Hidetsugu Furuichi, Koshi Taguchi, Satoshi Yukumoto, Shigehiro Nishino

Abstract: Investigations were carried out to achieve high performance Silicon Carbide Metal-Oxide-Semiconductor device structures. 4H-SiC/SiO2...

Authors: Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Abstract: High temperature (1250 oC) NO annealing was performed for deposited oxide (SiO2) and oxynitride (SiON) films on n-type 4H-SiC. Interface...

Authors: K.Y. Cheong, Wook Bahng, Nam Kyun Kim

Abstract: In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O)...

Authors: Florin Ciobanu, Gerhard Pensl, Valeri V. Afanas'ev, Adolf Schöner

Abstract: A surface-near Gaussian nitrogen (N) profile is implanted into n-type 4H-SiC epilayers prior to a standard oxidation process. Depending on...

Authors: Keiko Fujihira, Yoichiro Tarui, Kenichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami

Abstract: The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found...

Authors: Maciej Wolborski, Mietek Bakowski, Viljami Pore, Mikko Ritala, Markku Leskelä, Adolf Schöner, Anders Hallén

Abstract: Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001}...

Authors: Marc Avice, Ulrike Grossner, Edouard V. Monakhov, Joachim Grillenberger, Ola Nilsen, Helmer Fjellvåg, Bengt Gunnar Svensson

Abstract: In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated....

Authors: A. Paskaleva, R.R Ciechonski, Mikael Syväjärvi, E. Atanassova, Rositza Yakimova

Abstract: The electrical properties of Al2O3 as a gate dielectric in MOS structures based on n- and p-type 4H-SiC grown by sublimation method have...

Authors: Amador Pérez-Tomás, Phillippe Godignon, Narcis Mestres, Josep Montserrat, José Millan

Abstract: Oxidized Ta2Si layers have been used as high-k dielectric layer for 4H-SiC MOSFETs. The gate insulator was grown by dry oxidation of 40nm...


Showing 161 to 170 of 255 Paper Titles