Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/www.scientific.net/MSF.483-485

Paper Title Page

Authors: Marina V. Muzafarova, Ivan V. Ilyin, E.N. Mokhov, P.G. Baranov, B.Ya. Ber, A.N. Ionov, P.S. Kop'ev, M.A. Kaliteevskii, O.N. Godisov, A.K. Kaliteevskii

Abstract: The conclusion which is drawn from the EPR line broadening and narrowing of the N shallow donor in an isotope enriched and non-enriched...

507
Authors: Ivan G. Ivanov, A. Stelmach, Mats Kleverman, Erik Janzén

Abstract: The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor...

511
Authors: Nguyen Tien Son, Anne Henry, Junichi Isoya, Erik Janzén

Abstract: Electron paramagnetic resonance (EPR) was used to study 4H- and 6H-SiC doped with P during chemical vapour deposition (CVD) growth. In...

515
Authors: Adam Gali, T. Hornos, Peter Deák, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke

Abstract: Interaction of boron and aluminum with interstitial carbon is studied using first principles calculations. It is shown that carbon can form...

519
Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov

Abstract: We investigated the the interstitial configurations of the p-type dopants boron and aluminum and the n-type dopants nitrogen and phosphorus...

523
Authors: M. Bockstedte, Alexander Mattausch, Oleg Pankratov

Abstract: Using an ab initio method we analyze the mechanisms of the boron diffusion with emphasis on the role of the intrinsic interstitials. It is...

527
Authors: W.V.M. Machado, João F. Justo, Lucy V.C. Assali

Abstract: The electronic and structural properties of isolated 3d-transition metal impurities in 3C, 4H, and 2H silicon carbide have been...

531
Authors: Thomas Seyller

Abstract: Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000°C. The hydrogenated...

535
Authors: A. Catellani, G. Cicero, M.C. Righi, C.A. Pignedoli

Abstract: We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-principles molecular dynamics. We discuss...

541
Authors: Konstantin V. Emtsev, Thomas Seyller, Lothar Ley, A. Tadich, L. Broekman, E. Huwald, J.D. Riley, R.C.G. Leckey

Abstract: We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray...

547

Showing 121 to 130 of 255 Paper Titles