Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: A.V. Adedeji, Ayayi Claude Ahyi, John R. Williams, M.J. Bozack, S.E. Mohney, B. Liu, James D. Scofield

Abstract: Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were...

Authors: S.H. Wang, Owen Arnold, C.M. Eichfeld, S.E. Mohney, A.V. Adedeji, John R. Williams

Abstract: Tantalum-ruthenium diffusion barriers for contacts to SiC were investigated in this work. Stable specific contact resistances of (2 ± 1) x...

Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Jun Lu

Abstract: One important challenge in SiC Bipolar Junction Transistor (BJT) fabrication is to form good ohmic contacts to both n-type and p-type SiC....

Authors: M. Gao, Sergey P. Tumakha, T. Onishi, Susumu Tsukimoto, Masanori Murakami, Leonard J. Brillson

Abstract: We have used depth-resolved cathodoluminescence and Auger electron spectroscopies, DRCLS and AES, respectively, to probe the electronic...

Authors: John Crofton, John R. Williams, A.V. Adedeji, James D. Scofield, S. Dhar, Leonard C. Feldman, M.J. Bozack

Abstract: Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented....

Authors: Wei Jie Lu, G.R. Landis, W.E. Collins, W.C. Mitchel

Abstract: Al based alloys, such as Ti/Al, are commonly used for ohmic contacts on p-type SiC. The interfacial structures of a metal alloy film on SiC...

Authors: Bang Hung Tsao, Jacob Lawson, James D. Scofield

Abstract: AlNi and Ni2Si based ohmic contacts to p-type 4H-SiC have been produced using low energy ion implantation, a Ti contact layer, and...

Authors: Sergey P. Tumakha, L.M. Porter, D.J. Ewing, Qamar-ul Wahab, X.Y. Ma, Tangali S. Sudarshan, Leonard J. Brillson

Abstract: We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to correlate subsurface deep level emissions and double barrier...

Authors: D.J. Ewing, Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X.Y. Ma, Tangali S. Sudarshan, L.M. Porter

Abstract: In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an...

Authors: Y. Wang, M.K. Mikhov, B.J. Skromme

Abstract: The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni...


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