Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: J.L. Cantin, Hans Jürgen von Bardeleben

Abstract: Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon dangling bond center as the main paramagnetic interface defect...

Authors: Christoph Thill, Jan Knaup, Peter Deák, Thomas Frauenheim, Wolfgang J. Choyke

Abstract: The high density of interface electron traps in the SiC/SiO2 system, near the conduction band of 4H-SiC, is often ascribed to graphitic...

Authors: S. Nie, R.M. Feenstra

Abstract: Scanning tunneling microscopy and spectroscopy have been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC...

Authors: Owen J. Guy, L. Chen, G. Pope, K.S. Teng, T. Maffeis, S.P. Wilks, Philip A. Mawby, T.E. Jenkins, A. Brieva, D.J. Hayton

Abstract: The investigation of the silicon carbide surface after a sacrificial silicon oxidation technique is reported. Oxidation of SiC is a...

Authors: K. Kakubari, R. Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Abstract: Real time observation of SiC oxidation was performed using an in-situ ellipsometer over the temperature range from 900°C to 1150°C. The...

Authors: A.M. Hoff, E. Oborina

Abstract: Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential...

Authors: Ruby N. Ghosh, Reza Loloee, Tamara Isaacs-Smith, John R. Williams

Abstract: SiC based field-effect devices are attractive for electronic and sensing applications above 250 °C. At these temperatures the reliability...

Authors: Kenji Fukuda, Makoto Kato, Shinsuke Harada, Kazutoshi Kojima

Abstract: SiC power MOSFETs are expected to be normally-off type fast switching devices. The on-resistance of SiC power MOSFETs is much higher than...

Authors: Amador Pérez-Tomás, Phillippe Godignon, Jean Camassel, Narcis Mestres, Veronique Soulière

Abstract: 4H-SiC MOSFET devices with low temperature dry thermal oxidation (1050 °C 1 h) and TEOS plasma enhanced CVD deposited oxides on 4H-SiC...

Authors: Caroline Blanc, Dominique Tournier, Phillippe Godignon, D.J. Brink, Veronique Soulière, Jean Camassel

Abstract: We report on 4H-SiC MOSFET devices implemented on p-type <11-20>-oriented epitaxial layers, using a two-step procedure for gate oxide...


Showing 241 to 250 of 379 Paper Titles