Paper Title
Authors: J.R. Grim, Marek Skowronski, W.J. Everson, V.D. Heydemann
Abstract:The selectivity, material removal rate, and the residual subsurface damage of colloidal silica (CS) chemi-mechanical polishing (CMP) of...
Authors: Peter Kuo, Ian Currier
Abstract:Chemical-mechanical polishing (CMP) has proven a powerful tool for the final polishing of semiconductor and compound semiconductor...
Authors: J. Dunning, Xiao An Fu, Mehran Mehregany, Christian A. Zorman
Abstract:This paper details the characterization of polycrystalline SiC (poly-SiC) thin films deposited by low pressure chemical vapor deposition....
Authors: R. Panday, Xiao An Fu, Srihari Rajgopal, T. Lisby, S.A. Nikles, K. Najafi, Mehran Mehregany
Abstract:This paper explores polycrystalline 3C-silicon carbide (poly-SiC) deposited by LPCVD for fabricating flexible ribbon cable interconnects for...
Authors: Christian Förster, Volker Cimalla, M. Stubenrauch, Carsten Rockstuhl, Klemens Brueckner, Matthias A. Hein, Jörg Pezoldt, Oliver Ambacher
Abstract:In this paper the multifariousness of SiC/Si heterostructures for device and sensor applications will be demonstrated. 3C-SiC based...
Authors: Laura J. Evans, Glenn M. Beheim
Abstract:High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical...
Authors: Konstantinos Zekentes, I. Zergioti, A. Klini, George Konstantinidis
Abstract:A 248 nm (KrF) excimer laser with a repetition rate of 10 Hz, pulse duration of 30 ns and beam energy up to 450 mJ was employed to form vias...
Authors: Mattias Südow, Kristoffer Andersson, Niklas Billström, Joakim Nilsson, Per Åke Nilsson, Niklas Rorsman, Johan Ståhl, Herbert Zirath
Authors: John W. Palmour
Abstract:As SiC devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers...
Showing 261 to 270 of 379 Paper Titles