Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: J.R. Grim, Marek Skowronski, W.J. Everson, V.D. Heydemann

Abstract: The selectivity, material removal rate, and the residual subsurface damage of colloidal silica (CS) chemi-mechanical polishing (CMP) of...

Authors: Peter Kuo, Ian Currier

Abstract: Chemical-mechanical polishing (CMP) has proven a powerful tool for the final polishing of semiconductor and compound semiconductor...

Authors: J. Dunning, Xiao An Fu, Mehran Mehregany, Christian A. Zorman

Abstract: This paper details the characterization of polycrystalline SiC (poly-SiC) thin films deposited by low pressure chemical vapor deposition....

Authors: R. Panday, Xiao An Fu, Srihari Rajgopal, T. Lisby, S.A. Nikles, K. Najafi, Mehran Mehregany

Abstract: This paper explores polycrystalline 3C-silicon carbide (poly-SiC) deposited by LPCVD for fabricating flexible ribbon cable interconnects...

Authors: Christian Förster, Volker Cimalla, M. Stubenrauch, Carsten Rockstuhl, Klemens Brueckner, Matthias A. Hein, Jörg Pezoldt, Oliver Ambacher

Abstract: In this paper the multifariousness of SiC/Si heterostructures for device and sensor applications will be demonstrated. 3C-SiC based...

Authors: Laura J. Evans, Glenn M. Beheim

Abstract: High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical...

Authors: Konstantinos Zekentes, I. Zergioti, A. Klini, George Konstantinidis

Abstract: A 248 nm (KrF) excimer laser with a repetition rate of 10 Hz, pulse duration of 30 ns and beam energy up to 450 mJ was employed to form...

Authors: Mattias Südow, Kristoffer Andersson, Niklas Billström, Joakim Nilsson, Per Åke Nilsson, Niklas Rorsman, Johan Ståhl, Herbert Zirath
Authors: John W. Palmour

Abstract: As SiC devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key...


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