Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/www.scientific.net/MSF.527-529

Paper Title Page

Authors: G. Skibinski, D. Braun, D. Kirschnik, R. Lukaszewski

Abstract: This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially...

1141
Authors: Dietrich Stephani, Reinhold Schörner, Dethard Peters, Peter Friedrichs

Abstract: We have carefully investigated a number of more than 120 selected chips fabricated on one wafer, by I-V measurements at two different...

1147
Authors: Andrea Irace, Vincenzo d'Alessandro, Giovanni Breglio, Paolo Spirito, Andrea Bricconi, Rossano Carta, Diego Raffo, Luigi Merlin

Abstract: The electrothermal behavior of 4H-SiC 600 V Schottky diodes operated in forward mode is analyzed through numerical and analytically-based...

1151
Authors: Michael Treu, Roland Rupp, Chee Siew Tai, Peter Blaschitz, Jochen Hilsenbeck, Helmut Brunner, Dethard Peters, Rudolf Elpelt, T. Reimann

Abstract: Today silicon carbide (SiC) Schottky diodes are mainly used in the power factor control (PFC) unit of high end switched mode power...

1155
Authors: Lin Zhu, T. Paul Chow, Kenneth A. Jones, Charles Scozzie, Anant K. Agarwal

Abstract: We theoretically and experimentally compare the performance of a new JBS rectifier structure, the Buried Channel JBS (BC-JBS) rectifier,...

1159
Authors: Dominique Tournier, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millan, Roger Bassett

Abstract: Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a...

1163
Authors: Vito Raineri, Fabrizio Roccaforte, Sebania Libertino, Alfonso Ruggiero, V. Massimino, Lucia Calcagno

Abstract: The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The...

1167
Authors: A. Kumta, E. Rusli, Chin Che Tin

Abstract: Silicon carbide (SiC) field plate terminated Schottky diodes using silicon dioxide (Si02) dielectric experience high electric field in the...

1171
Authors: Chiharu Ota, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa, Hiromichi Ohashi

Abstract: 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the...

1175
Authors: Tetsuo Hatakeyama, Chiharu Ota, Johji Nishio, Takashi Shinohe

Abstract: Scaling theory is applied in the design of power devices. The scaling law for power devices is presented. A new figure of merit (HFOM) is...

1179

Showing 271 to 280 of 379 Paper Titles