Paper Title
Authors: J. Neil Merrett, Igor Sankin, V. Bondarenko, C.E. Smith, D. Kajfez, Janna R. B. Casady
Abstract:Trenched, vertical SiC static induction transistors (SIT) for L-band power amplification were fabricated with implanted p-n junction gates...
Authors: Per Åke Nilsson, Niklas Rorsman, Mattias Südow, Kristoffer Andersson, Hans Hjelmgren, Herbert Zirath
Abstract:In order to increase the output power and drain efficiency, MESFETs in SiC have been made with a double gate recess technique. Typical...
Authors: Andrey O. Konstantinov, J.O. Svedberg, I.C. Ray, Chris I. Harris, Christer Hallin, B.O. Larsson
Abstract:High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs...
Authors: Makoto Ogata, S. Katakami, Shuichi Ono, Manabu Arai
Abstract:We fabricated a 0.5-μm gate MESFET on a bulk semi-insulating 4H-SiC substrate by using ion implantation for the channel layer and contact...
Authors: Kevin Matocha, Ed Kaminsky, Alexey Vertiatchikh, Jeff B. Casady
Abstract:4H-SiC MESFETs were fabricated using a bilayer dry thermal oxide/low-pressure chemical vapor deposited (LPCVD) silicon nitride for surface...
Authors: Dominique Tournier, Miquel Vellvehi, Phillippe Godignon, Xavier Jordá, José Millan
Abstract:The potential of SiC MESFETs has been demonstrated for high frequency applications on several circuits in the 1-5 GHz frequency range....
Authors: Mohamed Trabelsi, Nabil Sghaier, Jean Marie Bluet, Noureddine Yacoubi, Gérard Guillot, Christian Brylinski
Abstract:Our work is focused on the identification of defects responsible for current fluctuations at the origin of low frequency noise or random...
Authors: Dethard Peters, Reinhold Schörner, Peter Friedrichs, Dietrich Stephani
Abstract:SiC power MOSFETs are attractive electronic power switches for innovative power supply and motor drive solutions. The paper discusses this...
Authors: Sei Hyung Ryu, Sumi Krishnaswami, Brett A. Hull, Bradley Heath, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour, James D. Scofield
Abstract:8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel...
Showing 291 to 300 of 379 Paper Titles