Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: J. Neil Merrett, Igor Sankin, V. Bondarenko, C.E. Smith, D. Kajfez, Janna R. B. Casady

Abstract: Trenched, vertical SiC static induction transistors (SIT) for L-band power amplification were fabricated with implanted p-n junction gates...

Authors: Per Åke Nilsson, Niklas Rorsman, Mattias Südow, Kristoffer Andersson, Hans Hjelmgren, Herbert Zirath

Abstract: In order to increase the output power and drain efficiency, MESFETs in SiC have been made with a double gate recess technique. Typical...

Authors: Andrey O. Konstantinov, J.O. Svedberg, I.C. Ray, Chris I. Harris, Christer Hallin, B.O. Larsson

Abstract: High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs...

Authors: Makoto Ogata, S. Katakami, Shuichi Ono, Manabu Arai

Abstract: We fabricated a 0.5-μm gate MESFET on a bulk semi-insulating 4H-SiC substrate by using ion implantation for the channel layer and contact...

Authors: Kevin Matocha, Ed Kaminsky, Alexey Vertiatchikh, Jeff B. Casady

Abstract: 4H-SiC MESFETs were fabricated using a bilayer dry thermal oxide/low-pressure chemical vapor deposited (LPCVD) silicon nitride for surface...

Authors: Dominique Tournier, Miquel Vellvehi, Phillippe Godignon, Xavier Jordá, José Millan

Abstract: The potential of SiC MESFETs has been demonstrated for high frequency applications on several circuits in the 1-5 GHz frequency range....

Authors: Mohamed Trabelsi, Nabil Sghaier, Jean Marie Bluet, Noureddine Yacoubi, Gérard Guillot, Christian Brylinski

Abstract: Our work is focused on the identification of defects responsible for current fluctuations at the origin of low frequency noise or random...

Authors: Dethard Peters, Reinhold Schörner, Peter Friedrichs, Dietrich Stephani

Abstract: SiC power MOSFETs are attractive electronic power switches for innovative power supply and motor drive solutions. The paper discusses this...

Authors: Sei Hyung Ryu, Sumi Krishnaswami, Brett A. Hull, Bradley Heath, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour, James D. Scofield

Abstract: 8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel...


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