Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto

Abstract: SiC lateral MOSFETs with multi-RESURF structures have been fabricated by a self-aligned process. The “multi-RESURF” means “double RESURF”...

Authors: Ryouji Kosugi, Kenji Suzuki, Kazuto Takao, Yusuke Hayashi, Tsutomu Yatsuo, Kenji Fukuda, Hiromichi Ohashi, Kazuo Arai

Abstract: A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacial defects of the SiO2/4H-SiC interface and...

Authors: Sumi Krishnaswami, Sei Hyung Ryu, Bradley Heath, Anant K. Agarwal, John W. Palmour, Bruce Geil, Aivars J. Lelis, Charles Scozzie

Abstract: Gate oxide reliability measurements of 4H-SiC DMOSFETs were performed using the Time Dependent Dielectric Breakdown (TDDB) technique at...

Authors: Aivars J. Lelis, Daniel B. Habersat, G. Lopez, J.M. McGarrity, F. Barry McLean, Neil Goldsman

Abstract: We have observed instability in the threshold voltage, VT, of SiC metal-oxide semiconductor field-effect transistors (MOSFETs) due to...

Authors: Siddharth Potbhare, Gary Pennington, Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, F. Barry McLean, J.M. McGarrity

Abstract: A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the...

Authors: Alton B. Horsfall, C.H.A. Prentice, Peter Tappin, Praneet Bhatnagar, Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina

Abstract: Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in...

Authors: Mrinal K. Das, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond

Abstract: The PiN diode is an attractive device to exploit the high power material advantages of 4H-SiC. The combination of high critical field and...

Authors: Philip G. Neudeck, David J. Spry, Andrew J. Trunek

Abstract: This paper reports on initial fabrication and electrical characterization of 3C-SiC p+n junction diodes grown on step-free 4H-SiC mesas....

Authors: Michael E. Levinshtein, Pavel A. Ivanov, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull

Abstract: Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300...

Authors: Anatoly M. Strel'chuk, A.V. Mashichev, Alexander A. Lebedev, A.N. Volkova, Konstantinos Zekentes

Abstract: The forward current was investigated in 4H-SiC p+n structures grown by sublimation epitaxy. The doping level, Nd-Na, of the n-layer was...


Showing 311 to 320 of 379 Paper Titles