Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: K. Zhu, G. Li, D. Johnstone, Y. Fu, J.H. Leach, B. Ganguly, Cole W. Litton, Hadis Morkoç

Abstract: 4H SiC high power photoconductive semiconductor switching devices were fabricated. A highly doped n+-GaN subcontact epilayer was grown on...

Authors: Yoshitaka Sugawara

Abstract: To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on...

Authors: Anant K. Agarwal, Sumi Krishnaswami, Ben Damsky, Jim Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour

Abstract: We report on the development of the first 1 cm x 1 cm SiC Thyristor chip capable of blocking 5 kV. This demonstrates the present quality of...

Authors: Lin Zhu, T. Paul Chow

Abstract: For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large...

Authors: Qing Chun Jon Zhang, Sei Hyung Ryu, Charlotte Jonas, Anant K. Agarwal, John W. Palmour
Authors: Anant K. Agarwal, Sumi Krishnaswami, Jim Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie, Robert E. Stahlbush

Abstract: SiC BJTs show instability in the I-V characteristics after as little as 15 minutes of operation. The current gain reduces, the...

Authors: Anant K. Agarwal, Fatima Husna, Jeremy Haley, Howard Bartlow, Bill McCalpin, Sumi Krishnaswami, Craig Capell, Sei Hyung Ryu, John W. Palmour

Abstract: For the first time, 4H-SiC RF bipolar junction transistors have been used to produce an output power in excess of 2.1 kW at 425 MHz. For an...

Authors: Jian Hui Zhang, Jian Wu, Petre Alexandrov, Terry Burke, Kuang Sheng, Jian H. Zhao

Abstract: This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme....

Authors: Ivan Perez-Wurfl, Feng Zhao, Chih Fang Huang, John Torvik, Bart Van Zeghbroeck

Abstract: We report for the first time on RF SiC BJTs fabricated on semi-insulating (SI) substrates with L-band performance. Small-periphery...

Authors: Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner

Abstract: This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown...


Showing 331 to 340 of 379 Paper Titles