Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/www.scientific.net/MSF.527-529

Paper Title Page

Authors: S. Balachandran, T. Paul Chow, Anant K. Agarwal

Abstract: We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental...

1429
Authors: S. Balachandran, T. Paul Chow, Anant K. Agarwal

Abstract: The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically...

1433
Authors: Sumi Krishnaswami, Anant K. Agarwal, Jim Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie

Abstract: This paper summarizes the recent demonstration of 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear...

1437
Authors: Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, Sumi Krishnaswami, John W. Palmour

Abstract: For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence of the common-emitter current gain β on the...

1441
Authors: Jim Richmond, Sei Hyung Ryu, Sumi Krishnaswami, Anant K. Agarwal, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie

Abstract: This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode...

1445
Authors: Yang Sui, Ginger G. Walden, Xiao Kun Wang, James A. Cooper

Abstract: We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state...

1449
Authors: Tetsuya Hayashi, Yoshio Shimoida, Hideaki Tanaka, Shigeharu Yamagami, Satoshi Tanimoto, Masakatsu Hoshi

Abstract: We demonstrate a novel power Si/4H-SiC heterojunction tunneling transistor (HETT) on the basis of theoretical analysis and experimental...

1453
Authors: Peter M. Sandvik, Majdeddin Ali, Vinayak Tilak, Kevin Matocha, Thomas Stauden, Jesse B. Tucker, John Deluca, Oliver Ambacher

Abstract: Depletion-mode 4H-SiC FETs were fabricated for use as harsh environment gas sensors. To enable sensitivity to NOx, O2 and H2 gases, metal...

1457
Authors: Feng Yan, Xiao Bin Xin, Petre Alexandrov, Carl M Stahle, Bing Guan, Jian H. Zhao

Abstract: A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n...

1461
Authors: Bernard F. Phlips, Karl D. Hobart, Francis J. Kub, Robert E. Stahlbush, Mrinal K. Das, Gianluigi De Geronimo, Paul O' Connor

Abstract: We have tested the radiation detection performance of Silicon Carbide (SiC) PIN diodes originally developed as high power diodes. These...

1465

Showing 341 to 350 of 379 Paper Titles