Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Jeffery B. Fedison, Chris S. Cowen, Jerome L. Garrett, E.T. Downey, James W. Kretchmer, R.L. Klinger, H.C. Peters, Jesse B. Tucker, Kevin Matocha, L.B. Rowland, Steve Arthur

Abstract: Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are...

Authors: Asmita Saha, James A. Cooper

Abstract: We describe an optimized design for the 1 kV short-channel 4H-SiC power DMOSFET, obtained from numerical simulations using the Taguchi...

Authors: Adolf Schöner, Mietek Bakowski, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe

Abstract: Vertical DMOSFET devices with varying size from single cell to 3x3 mm2 large devices have been realized. The investigated devices had...

Authors: G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos

Abstract: We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors...

Authors: Shinsuke Harada, Makoto Kato, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai

Abstract: The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed...

Authors: Yoichiro Tarui, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Yukiyasu Nakao, Masayuki Imaizumi, Hiroaki Sumitani, Tetsuya Takami, Tatsuo Ozeki, Tatsuo Oomori

Abstract: 4H-SiC epilayer channel MOSFETs are fabricated. The MOSFETs have an n- epilayer channel which improves the surface where the MOS channel is...

Authors: Masayuki Imaizumi, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, Tatsuo Ozeki

Abstract: Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are...

Authors: H. Nakao, Hideno Mikami, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
Authors: Hiroyuki Fujisawa, Takashi Tsuji, Masaharu Nishiura

Abstract: This paper reports the channel mobilities of MOSFETs formed on the trench sidewalls with different crystal faces including (0001), (000-1),...

Authors: Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda

Abstract: We have fabricated inversion-type p-channel MOSFETs on 4H-SiC substrates. In this paper, influences of gate oxidation process on the...


Showing 301 to 310 of 379 Paper Titles