Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Lin Cheng, Janna R. B. Casady, Michael S. Mazzola, V. Bondarenko, Robin L. Kelley, Igor Sankin, J. Neil Merrett, Jeff B. Casady

Abstract: In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with...

Authors: Yu Zhu Li, Petre Alexandrov, Jian Hui Zhang, Larry X. Li, Jian H. Zhao

Abstract: SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide...

Authors: Jian H. Zhao, Petre Alexandrov, Yu Zhu Li, Larry X. Li, Kuang Sheng, Ramon Lebron-Velilla

Abstract: This paper reports recent progress in the development of a vertical JFET, the purely vertical JFET based on trenched-and-implanted vertical...

Authors: Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Konstantin Vassilevski, Anthony G. O'Neill

Abstract: Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high...

Authors: Y.C. Choi, Ho Young Cha, Lester F. Eastman, Michael G. Spencer

Abstract: A new silicon carbide (SiC) enhancement-mode lateral channel vertical junction fieldeffect transistor (LC-VJFET), namely “source inserted...

Authors: Takeyoshi Masuda, Kazuhiro Fujikawa, Kaoru Shibata, Hideto Tamaso, Satoshi Hatsukawa, Hitoki Tokuda, Akihiko Saegusa, Yasuo Namikawa, Hideki Hayashi

Abstract: We fabricated 4H-SiC lateral JFETs with a reduced surface field (RESURF) structure, which can prevent the concentration of electric field...

Authors: Igor Sankin, V. Bondarenko, Robin L. Kelley, Jeff B. Casady

Abstract: Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation...

Authors: Robin L. Kelley, T. Brignac, Michael S. Mazzola, Jeff B. Casady

Abstract: The power junction field effect transistor (JFET) is the second most mature SiC device, after the SiC Schottky diode, and is commonly...

Authors: Dominique Tournier, Miquel Vellvehi, Phillippe Godignon, Josep Montserrat, Dominique Planson, F. Sarrus

Abstract: High voltage, high current capabilities of SiC based devices has been already proved, and high current SiC devices working at high...

Authors: Yasunori Tanaka, Koji Yano, Mitsuo Okamoto, Akio Takatsuka, Kenji Fukuda, Masanobu Kasuga, Kazuo Arai, Tsutomu Yatsuo

Abstract: Silicon carbide static induction transistors with submicron buried p+ gate (SiC-BGSITs) have been successfully developed through innovative...


Showing 281 to 290 of 379 Paper Titles