Paper Title
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Authors: Gary Pennington, Siddharth Potbhare, Neil Goldsman, Daniel B. Habersat, Aivars J. Lelis
Abstract:In this work we present a comparison between the field-effect (FE) and conductivity (inv) mobilities calculated from ID-VG measurements on...
1055
Authors: Amador Pérez-Tomás, Miquel Vellvehi, Narcis Mestres, José Millan, P. Vennegues, J. Stoemenos
Abstract:A high field-effect mobility peak (50 cm2/Vs) has been extracted in (0001) Si face 4HSiC MOSFETs with oxidized Ta2Si (O-Ta2Si) high-k...
1059
Authors: Ayayi Claude Ahyi, S.R. Wang, John R. Williams
Abstract:The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs...
1063
Authors: Marc Avice, Ulrike Grossner, Ola Nilsen, Jens S. Christensen, Helmer Fjellvåg, Bengt Gunnar Svensson
Abstract:Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant. After post-deposition,...
1067
Authors: Carey M. Tanner, Jong Woo Choi, Jane P. Chang
Abstract:The electronic properties of HfO2 films on 4H-SiC were investigated to determine their suitability as high-κ dielectrics in SiC power MOS...
1071
Authors: Carey M. Tanner, Jun Lu, Hans Olof Blom, Jane P. Chang
Abstract:The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power...
1075
Authors: Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Ozeki, Eisuke Tokumitsu
Abstract:Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using...
1079
Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: M. Brezeanu, M. Badila, Gheorghe Brezeanu, F. Udrea, C. Boianceanu, G. Amaratunga, Konstantinos Zekentes
Abstract:A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the breakdown...
1087
Authors: W.J. Everson, V.D. Heydemann, Rick D. Gamble, David Snyder, G. Goda, Marek Skowronski, J.R. Grim, E. Berkman, Joan M. Redwing, J.D. Acord
Abstract:A new chemical mechanical polishing process (ACMP) has been developed by the Penn State University Electro-Optics Center for producing...
1091
Showing 251 to 260 of 379 Paper Titles