Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Gary Pennington, Siddharth Potbhare, Neil Goldsman, Daniel B. Habersat, Aivars J. Lelis

Abstract: In this work we present a comparison between the field-effect (FE) and conductivity (inv) mobilities calculated from ID-VG measurements...

Authors: Amador Pérez-Tomás, Miquel Vellvehi, Narcis Mestres, José Millan, P. Vennegues, J. Stoemenos

Abstract: A high field-effect mobility peak (50 cm2/Vs) has been extracted in (0001) Si face 4HSiC MOSFETs with oxidized Ta2Si (O-Ta2Si) high-k...

Authors: Ayayi Claude Ahyi, S.R. Wang, John R. Williams

Abstract: The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs...

Authors: Marc Avice, Ulrike Grossner, Ola Nilsen, Jens S. Christensen, Helmer Fjellvåg, Bengt Gunnar Svensson

Abstract: Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant. After post-deposition,...

Authors: Carey M. Tanner, Jong Woo Choi, Jane P. Chang

Abstract: The electronic properties of HfO2 films on 4H-SiC were investigated to determine their suitability as high-κ dielectrics in SiC power MOS...

Authors: Carey M. Tanner, Jun Lu, Hans Olof Blom, Jane P. Chang

Abstract: The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power...

Authors: Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Ozeki, Eisuke Tokumitsu

Abstract: Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD)...

Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim

Abstract: The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...

Authors: M. Brezeanu, M. Badila, Gheorghe Brezeanu, F. Udrea, C. Boianceanu, G. Amaratunga, Konstantinos Zekentes

Abstract: A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the breakdown...

Authors: W.J. Everson, V.D. Heydemann, Rick D. Gamble, David Snyder, G. Goda, Marek Skowronski, J.R. Grim, E. Berkman, Joan M. Redwing, J.D. Acord

Abstract: A new chemical mechanical polishing process (ACMP) has been developed by the Penn State University Electro-Optics Center for producing...


Showing 251 to 260 of 379 Paper Titles