Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Oleg Korolkov, Toomas Rang, A. Syrkin, V. Dmitriev

Abstract: This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky...

Authors: Masataka Satoh, H. Matsuo

Abstract: The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V...

Authors: Tomonori Nakamura, Toshiyuki Miyanagi, Isaho Kamata, Hidekazu Tsuchida

Abstract: We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier...

Authors: Konstantin Vassilevski, Irina P. Nikitina, Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes, C. Mark Johnson

Abstract: 4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up...

Authors: Sokrates T. Pantelides, Sanwu Wang, A. Franceschetti, Ryszard Buczko, M. Di Ventra, Sergey N. Rashkeev, L. Tsetseris, M.H. Evans, I.G. Batyrev, Leonard C. Feldman, S. Dhar, K. McDonald, Robert A. Weller, R.D. Schrimpf, D.M. Fleetwood, X.J. Zhou, John R. Williams, Chin Che Tin, G.Y. Chung, Tamara Isaacs-Smith, S.R. Wang, S.J. Pennycook, G. Duscher, K. Van Benthem, L.M. Porter

Abstract: Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and...

Authors: S. Dhar, S.R. Wang, Ayayi Claude Ahyi, Tamara Isaacs-Smith, Sokrates T. Pantelides, John R. Williams, Leonard C. Feldman

Abstract: Post-oxidation anneals that introduce nitrogen at the SiO2/4H-SiC interface have been most effective in reducing the large interface trap...

Authors: Satoshi Tanimoto

Abstract: In this work, it was clarified that many dislocations present on the substrate surface markedly deteriorated the TDDB property of thermal...

Authors: Einar Ö. Sveinbjörnsson, G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Herbert Zirath, T. Rödle, R. Jos

Abstract: We report investigations of MOS and MOSFET devices using a gate oxide grown in the presence of sintered alumina. In contrast to...

Authors: Mrinal K. Das, Brett A. Hull, Sumi Krishnaswami, Fatima Husna, Sarah K. Haney, Aivars J. Lelis, Charles Scozzie, James D. Scofield

Abstract: Two previously reported MOS processes, oxidation in the presence of metallic impurities and annealing in nitric oxide (NO), have both been...

Authors: Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Showing 221 to 230 of 379 Paper Titles