Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Masataka Satoh, Tomoyuki Suzuki

Abstract: The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of...

Authors: Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamoto, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Abstract: We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA)...

Authors: Masami Shibagaki, Masataka Satoh, Yasumi Kurematsu, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Shohei Miyagawa

Abstract: We developed EBAS-100, which is available to 100 mm diameter SiC wafer, for post ion implantation annealing in order to realize silicon...

Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi

Abstract: This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature...

Authors: Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio

Abstract: An n-type 8° off-axis <0001> 4H-SiC epitaxial wafer was processed. The n-type epilayer had doping and thickness of, respectively, ~3 × 1015...

Authors: Fabio Bergamini, Shailaja P. Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E. Saddow, Roberta Nipoti

Abstract: This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400°C and...

Authors: Martin Rambach, Lothar Frey, Anton J. Bauer, Heiner Ryssel

Abstract: Characterization of post implantation annealing steps is done by extracting the activation and compensation data of implanted Al atoms....

Authors: Kenneth A. Jones, T.S. Zheleva, Pankaj B. Shah, Michael A. Derenge, Jaime A. Freitas, G.J. Gerardi, R.D. Vispute, Shiva S. Hullavarad, S. Dar

Abstract: SiC samples implanted at 600°C with 1018, 1019, or 1020 cm-3 of Al to a depth of ~ 0.3 μm and annealed with a (BN)AlN cap at temperatures...

Authors: Akimasa Kinoshita, Makoto Katou, Miwa Kawasaki, Kazutoshi Kojima, Kenji Fukuda, Kazuo Arai, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

Abstract: We investigate the effect of surface orientation and off-angle for Al-implanted 4H-SiC samples after high temperature annealing. The...


Showing 191 to 200 of 379 Paper Titles