Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: L. Chen, Xiao An Fu, Christian A. Zorman, Mehran Mehregany

Abstract: A selective atmospheric pressure chemical vapor deposition (APCVD) process has been developed to deposit porous polycrystalline silicon...

Authors: B. Friedel, Siegmund Greulich-Weber

Abstract: We have investigated the growth of SiC, following a modified sol-gel process, which not only allows the realization of 3D photonic bandgap...

Authors: Tetyana Nychyporuk, Olivier Marty, Jean Marie Bluet, Vladimir Lysenko, Robert Perrin, Gérard Guillot, Daniel Barbier

Abstract: SiC nanopowder has been formed using an original technological approach based on grinding of bulk porous SiC nanostructures. The initial...

Authors: Aparna Gupta, Chacko Jacob

Abstract: In this paper, we report a novel route to synthesize nano-sized cubic silicon carbide (3CSiC) powder by a chemical vapor deposition (CVD)...

Authors: Han Kyu Seong, Seung Yong Lee, Heon Jin Choi, Tae Hong Kim, Nam Kyu Cho, Kee Suk Nahm, Sang Kwon Lee

Abstract: We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The...

Authors: V.G. Sevastyanov, R.G. Pavelko, Yu S. Ezhov, N.T. Kuznetsov

Abstract: The major objective of our studies was the thermodynamic analysis of the nSiС+SiO2 system and revealing potentialities for the...

Authors: Bengt Gunnar Svensson, Anders Hallén, J. Wong-Leung, Martin S. Janson, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, H. K.-Nielsen, C. Jagadish, Joachim Grillenberger

Abstract: A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics...

Authors: Marco Buzzo, Mauro Ciappa, Michael Treu, Wolfgang Fichtner
Authors: Masataka Satoh, Tomoyuki Suzuki, Shohei Miyagawa

Abstract: The annealing behavior of the N+ implantation-induced defects in 4H-SiC(0001) has been investigated by means of Rutherford backscattering...

Authors: Servane Blanqué, R. Pérez, Narcis Mestres, Sylvie Contreras, Jean Camassel, Phillippe Godignon

Abstract: We have performed nitrogen and phosphorus co-implants at room temperature to obtain high n-type carrier concentration layers in SiC. An...


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