Paper Title
Authors: L. Chen, Xiao An Fu, Christian A. Zorman, Mehran Mehregany
Abstract:A selective atmospheric pressure chemical vapor deposition (APCVD) process has been developed to deposit porous polycrystalline silicon...
Authors: B. Friedel, Siegmund Greulich-Weber
Abstract:We have investigated the growth of SiC, following a modified sol-gel process, which not only allows the realization of 3D photonic bandgap...
Authors: Tetyana Nychyporuk, Olivier Marty, Jean Marie Bluet, Vladimir Lysenko, Robert Perrin, Gérard Guillot, Daniel Barbier
Abstract:SiC nanopowder has been formed using an original technological approach based on grinding of bulk porous SiC nanostructures. The initial...
Authors: Aparna Gupta, Chacko Jacob
Abstract:In this paper, we report a novel route to synthesize nano-sized cubic silicon carbide (3CSiC) powder by a chemical vapor deposition (CVD)...
Authors: Han Kyu Seong, Seung Yong Lee, Heon Jin Choi, Tae Hong Kim, Nam Kyu Cho, Kee Suk Nahm, Sang Kwon Lee
Abstract:We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The...
Authors: V.G. Sevastyanov, R.G. Pavelko, Yu S. Ezhov, N.T. Kuznetsov
Abstract:The major objective of our studies was the thermodynamic analysis of the nSiС+SiO2 system and revealing potentialities for the...
Authors: Bengt Gunnar Svensson, Anders Hallén, J. Wong-Leung, Martin S. Janson, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, H. K.-Nielsen, C. Jagadish, Joachim Grillenberger
Abstract:A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are...
Authors: Marco Buzzo, Mauro Ciappa, Michael Treu, Wolfgang Fichtner
Authors: Masataka Satoh, Tomoyuki Suzuki, Shohei Miyagawa
Abstract:The annealing behavior of the N+ implantation-induced defects in 4H-SiC(0001) has been investigated by means of Rutherford backscattering...
Authors: Servane Blanqué, R. Pérez, Narcis Mestres, Sylvie Contreras, Jean Camassel, Phillippe Godignon
Abstract:We have performed nitrogen and phosphorus co-implants at room temperature to obtain high n-type carrier concentration layers in SiC. An...
Showing 181 to 190 of 379 Paper Titles