Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/www.scientific.net/MSF.527-529

Paper Title Page

Authors: Sima Dimitrijev, Ji Sheng Han, Jin Zou

Abstract: High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface after oxidation in either NO or dry O2...

975
Authors: Antonella Poggi, Francesco Moscatelli, Andrea Scorzoni, Giovanni Marino, Roberta Nipoti, Michele Sanmartin

Abstract: Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the...

979
Authors: Kevin Matocha, Chris S. Cowen, Richard Beaupre, Jesse B. Tucker

Abstract: 4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of...

983
Authors: Tsunenobu Kimoto, H. Kawano, Masato Noborio, Jun Suda, Hiroyuki Matsunami

Abstract: Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures....

987
Authors: Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valeri V. Afanas'ev, Sheron Shamuilia, Adolf Schöner, Tsunenobu Kimoto

Abstract: A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation...

991
Authors: Bharat Krishnan, Hrishikesh Das, Yaroslav Koshka, Igor Sankin, P.A. Martin, Michael S. Mazzola

Abstract: Dielectric charges and charge stability were compared in different dielectrics formed on SiC by different processing techniques. The...

995
Authors: Junji Senzaki, Atsushi Shimozato, Kenji Fukuda

Abstract: Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that...

999
Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, H. Nohira, T. Hattori
1003
Authors: Daniel B. Habersat, Aivars J. Lelis, G. Lopez, J.M. McGarrity, F. Barry McLean

Abstract: We have investigated the distribution of oxide traps and interface traps in 4H Silicon Carbide MOS devices. The density of interface traps,...

1007
Authors: Morgan S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis

Abstract: In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC...

1011

Showing 231 to 240 of 379 Paper Titles