Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/www.scientific.net/MSF.615-617

Paper Title Page

Authors: Dirk Kranzer, Bruno Burger, Nicolas Navarro, Olivier Stalter

Abstract: Currently there are several silicon carbide (SiC) field effect or bipolar transistor types in development with normally-on and normally-off...

895
Authors: Peter A. Losee, Kevin Matocha, Steve Arthur, Eladio Delgado, Richard Beaupre, A. Pautsch, R. Ramakrishna Rao, Jeff Nasadoski, Jerome L. Garrett, Zachary Stum, Ljubisa Stevanovic, Rosa Ana Conte, Keith Monaghan

Abstract: The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of...

899
Authors: Shuhei Nakata, Shin Ichi Kinouchi, T. Sawada, T. Oi, Tatsuo Oomori

Abstract: For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We...

903
Authors: Immo Koch, Wolf Rüdiger Canders

Abstract: Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size...

907
Authors: Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, Josep Montserrat, André Lhorte, S. Carcouet, D. Leonard

Abstract: The expansion of the electrical communications and distribution networks strongly contribute to the increase in the risks of appearance of...

911
Authors: A. Maralani, Michael S. Mazzola, David C. Sheridan, Igor Sankin, Volodymyr Bondarenko

Abstract: The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes...

915
Authors: Stefan Berberich, A. Goñi, Wolfgang Schäper, Manfred Kolm

Abstract: Of all the wide bandgap semiconductors, SiC is currently the most attractive material for aerospace applications. It offers significant...

919
Authors: E. Maset, Esteban Sanchis-Kilders, Pierre Brosselard, Xavier Jordá, Miquel Vellvehi, Phillippe Godignon

Abstract: Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper...

925
Authors: Philip G. Neudeck, David J. Spry, Liang Yu Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger D. Meredith, Terry L. Ferrier, Michael J. Krasowski, Norman F. Prokop

Abstract: This paper updates the long-term 500 °C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small...

929
Authors: Hyun Hee Hwang, Jung Kyu Kim, Jong Mun Choi, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Hae Yong Lee

Abstract: GaN epitaxial layers were grown on sapphire substrate deposited an aluminum (Al) buffer layer using a hydride vapor phase epitaxy (HVPE)...

935

Showing 221 to 230 of 247 Paper Titles