Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Harsh Naik, K. Tang, T. Paul Chow

Abstract: The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two...

Authors: Hitoshi Moriya, Shiro Hino, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu

Abstract: We have examined the effect of oxidant in metalorganic chemical vapor deposition (MOCVD) of Al2O3 gate insulator on MOSFET electrical...

Authors: Takeshi Ohshima, Shinobu Onoda, Toshiro Kamada, Kazutoshi Hotta, Kenji Kawata, Osamu Eryu

Abstract: Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type epitaxial 4H-SiC substrates with different surface...

Authors: Harsh Naik, K. Tang, T. Marron, T. Paul Chow, Jody Fronheiser

Abstract: The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of...

Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto

Abstract: P-channel MOSFETs have been fabricated on 4H-SiC (0001) face as well as on 4H-SiC (03-38) and (11-20) faces. The gate oxides were formed by...

Authors: Eiichi Okuno, Takeshi Endo, Toshio Sakakibara, Shoichi Onda, Makoto Itoh, Tsuyoshi Uda

Abstract: Ab initio calculations were carried out to study the origin of the trap at the SiO2/SiC (MOS: Metal-Oxide-Semiconductor) interface with the...

Authors: R. Ramakrishna Rao, Kevin Matocha, Vinayak Tilak

Abstract: The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various...

Authors: Vinayak Tilak, Kevin Matocha, Greg Dunne

Abstract: Silicon Carbide (SiC) based metal oxide semiconductor field effect transistors (MOSFETs) were fabricated and characterized using gated hall...

Authors: Siddharth Potbhare, Neil Goldsman, Akin Akturk, Aivars J. Lelis, Ronald Green

Abstract: We build upon our previous work on 4H SiC lateral MOSFETs to present physics based numerical modeling and characterization of a 4H-SiC...

Authors: Aivars J. Lelis, Daniel B. Habersat, Ronald Green, Neil Goldsman

Abstract: Although recent fast I-V measurements and subthreshold analysis reveal that the threshold-voltage instability due to low-field bias...


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