Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Liang Chun Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars J. Lelis, Sei Hyung Ryu

Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect....

Authors: Sergey L. Rumyantsev, Michael S. Shur, Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

Abstract: Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong...

Authors: Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro

Abstract: A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common...

Authors: Muhammad Nawaz, Carina Zaring, J. Bource, Marcelo Schupbach, Martin Domeij, H.S. Lee, Mikael Östling

Abstract: This paper addresses the performance of SiC NPN Bipolar Junction Transistors (BJTs) at high and low temperature. A current gain of 50 at...

Authors: Jian Hui Zhang, Leonid Fursin, Xue Qing Li, Xiao Hui Wang, Jian H. Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Abstract: This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base...

Authors: Reza Ghandi, Hyung Seok Lee, Martin Domeij, Benedetto Buono, Carl Mikael Zetterling, Mikael Östling

Abstract: In this study, high voltage blocking (2.7 kV) implantation-free SiC Bipolar Junction Transistors with low on-state resistance (12 mΩ•cm2)...

Authors: Yuki Negoro, Akihiko Horiuchi, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Kenichi Nonaka, Yusuke Maeyama, Masashi Sato, Masaaki Shimizu, Hiroaki Iwakuro

Abstract: Surface passivation of 4H-SiC has been investigated for high current-gain bipolar junction transistors (BJTs). For the characterization of...

Authors: Benedetto Buono, Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling

Abstract: Ion implantation for selective doping of SiC is problematic due to damage generation during the process and low activation of dopants. In...

Authors: Giuseppe Bertuccio, S. Caccia, Filippo Nava, Gaetano Foti, Donatella Puglisi, Claudio Lanzieri, S. Lavanga, Giuseppe Abbondanza, Danilo Crippa, F. Preti

Abstract: The design and the experimental results of some prototypes of SiC X-ray detectors are presented. The devices have been manufactured on a 2’’...

Authors: Alexander M. Ivanov, Evgenia V. Kalinina, Nikita B. Strokan, Alexander A. Lebedev

Abstract: The spectrometric characteristics of detectors based on 4H-SiC films with ion-doped p+–n junctions in a temperature range from 25 to 375 °C...


Showing 201 to 210 of 247 Paper Titles