Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Piotr Caban, Kinga Kościewicz, Wlodek Strupiński, Jan Szmidt, Karolina Pagowska, Renata Ratajczak, Marek Wojcik, Jaroslaw Gaca, Andrzej Turos

Abstract: The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase...

Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As

Abstract: Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....

Authors: Michał A. Borysiewicz, Eliana Kamińska, Anna Piotrowska, Iwona Pasternak, Rafał Jakieła, Elżbieta Dynowska

Abstract: Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by...

Authors: Lilyana Kolaklieva, Roumen Kakanakov, Plamen Stefanov, Volker Cimalla, S. Maroldt, Oliver Ambacher, Katja Tonisch, Florentina Niebelschütz

Abstract: Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application...

Authors: Olivier Ménard, Frédéric Cayrel, Emmanuel Collard, Daniel Alquier

Abstract: In this work, Ti/Al bilayer sputtered ohmic contacts on n-type Gallium Nitride films were studied as a function of process parameters such...

Authors: Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Moschetti, Valeria Puglisi, Vito Raineri

Abstract: The recent improvement of GaN material quality launched new perspective for its application in power devices. However, ion-implanted...

Authors: Taku Horii, Tomihito Miyazaki, Yu Saito, Shin Hashimoto, Tatsuya Tanabe, Makoto Kiyama

Abstract: Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN...

Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri

Abstract: Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In...

Authors: Young Hwan Choi, Ji Yong Lim, Kyu Heon Cho, Young Shil Kim, Min Koo Han

Abstract: AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any...

Authors: M. Angeles Gonzalez-Garrido, Jesus Grajal, Pablo Cubilla, Claudio Lanzieri, Antonio Cetronio

Abstract: This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These...


Showing 231 to 240 of 247 Paper Titles