Advances in Nanomaterials and Processing

Volumes 124-126

doi: 10.4028/

Paper Title Page

Authors: Min Sik Kim, Jae Ho Yun, Kyung Hoon Yoon, Byung Tae Ahn

Abstract: Silicone dioxide (SiO2) layer as an electrical insulator and diffusion barrier was deposited on a flexible stainless steel substrate by...

Authors: Sang Woo Kim, Shizuo Fujita, Min Su Yi, Han Ki Kim, Bee Lyong Yang, Dae Ho Yoon

Abstract: ZnO nanowalls and nanocolumns were synthesized on Si3N4 (50 nm)/Si (001) substrates at low growth temperature (350 and 400 oC) by...

Authors: Yen I Chou, Huey Ing Chen, Chien Kang Hsiung

Abstract: In this study, the dependence of Pd/GaAs Schottky diode on the electroless plating (EP) variable is systematically studied. Both alkaline...

Authors: Woong Joon Hwang, Hwa Jun Yeo, Moo Whan Shin

Abstract: This paper discusses about thermal performance of high power light emitted diode (HPLED) implemented with sintered metal wick type heat...

Authors: Hee Chang Jeon, Chan Jin Park, Hoon Young Cho, Tae Won Kang, Tae Whan Kim, Jae Eung Oh

Abstract: Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to...

Authors: N.K. Park, H.S. Lee, Y.S. No, Tae Whan Kim, Jeong Yong Lee, W.K. Choi

Abstract: The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis...

Authors: Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee

Abstract: A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction...

Authors: Dong Chan Kim, Bo Hyun Kong, Young Yi Kim, Hyung Koun Cho, Jeong Yong Lee, Dong Jun Park

Abstract: ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical...

Authors: Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, Myong Suk Oh, Ho Keun Song, Jeong Hyuk Yim, Jae Bin Lee, Hyeong Joon Kim

Abstract: Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C,...

Authors: Jeong Hyuk Yim, Ho Keun Song, Jeong Hyun Moon, Han Seok Seo, Jong Ho Lee, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim

Abstract: 4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances...


Showing 21 to 30 of 461 Paper Titles