Gettering and Defect Engineering in Semiconductor Technology XIII

Volumes 156-158

doi: 10.4028/

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Authors: M.V. Zamoryanskaya

Abstract: In this paper the new method for determination of luminescent centers concentration are discussed. While the possibility of electron traps...

Authors: Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Abstract: This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions...

Authors: M.C. Lemme

Abstract: This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of...

Authors: Marc Bescond, Michel Lannoo, L. Raymond, F. Michelini

Abstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We calculate the current characteristics with a...

Authors: Ulrich Wulf, Hans Richter

Abstract: We develop a theory for scaling properties of quantum transport in nano-field effect transistors. Our starting point is a one-dimensional...

Authors: I.V. Antonova, D.V. Marin, Vladimir A. Volodin, V.A. Skuratov, J. Jedrzejewski, I. Balberg

Abstract: In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the...

Authors: Hans Joachim Fitting, L. Fitting Kourkoutis, R. Salh, E.V. Kolesnikova, M.V. Zamoryanskaya, A. von Czarnowski, Bernd Schmidt

Abstract: Scanning transmission electron microscopy (STEM) in combination with electron energy loss spectroscopy (EELS) and cathodoluminescence (CL)...

Authors: Olga Varlamova, Markus Ratzke, Jürgen Reif

Abstract: The role of multi-pulse feedback in self-organized nanostructure (ripples) formation on silicon surface upon femtosecond laser ablation is...

Authors: I.V. Antonova, E.P. Neustroev, S.A. Smagulova, M.S. Kagan, P.S. Alekseev, S.K. Ray, N. Sustersic, J. Kolodzey

Abstract: The set of quantum confinement levels in SiGe quantum wells (QW) was observed in the temperature range from 80 to 300 K by means of charge...

Authors: Ekaterina V. Astrova, V.A. Tolmachev, Yulia A. Zharova, Galya V. Fedulova, A.V. Baldycheva, Tatiana S. Perova

Abstract: This paper summarises results on the design, fabrication and characterisation of one-dimensional (1D) Photonic Crystals (PCs) for silicon...


Showing 81 to 90 of 95 Paper Titles