Gettering and Defect Engineering in Semiconductor Technology XIII

Volumes 156-158

doi: 10.4028/

Paper Title Page

Authors: Sushant Sonde, Filippo Giannazzo, Vito Raineri, Salvatore Di Franco, Antonio Marino, Emanuele Rimini

Abstract: Irradiation with high energy (500 keV) C+ ions at fluences from 11013 to 11014 cm-2 was used to introduce controlled amounts of defects in...

Authors: Jayantha Senawiratne, Jeffery S. Cites, James G. Couillard, Johannes Moll, Carlo A. Kosik Williams, Patrick G. Whiting

Abstract: Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing...

Authors: Andrzej Misiuk, Alexander G. Ulyashin, Adam Barcz, Peter Formanek

Abstract: Accumulation of hydrogen in Czochralski silicon implanted with N2+ (Si:N; N dose, DN=1–1.8x1018 cm-2; energy E=140 keV) or O2+ (Si:O;...

Authors: Cesare Frigeri, L. Nasi, M. Serényi, A. Csik, Z. Erdélyi, Dezső L. Beke

Abstract: The influence of hydrogen on the structural stability of multilayers made of ultrathin (3 nm) Si and Ge amorphous layers submitted to...

Authors: Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Abstract: The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function...

Authors: Arthur Medvid, Pavels Onufrijevs, L. Fedorenko, N. Yusupov, Edvins Dauksta

Abstract: The influence of strongly absorbing N¬2 laser radiation on pores formation on a surface of Si single crystal has been investigated using...

Authors: Giso Hahn, Martin Käs, Bernhard Herzog

Abstract: In this contribution an overview of hydrogenation issues for (multi-)crystalline silicon material is given. Crystalline silicon material...

Authors: N.H. Nickel

Abstract: The influence of the hydrogen content in the amorphous starting material on hydrogen bonding and defect passivation in laser annealed...

Authors: Emanuele Cornagliotti, Harold F.W. Dekkers, Caterina Prastani, Joachim John, Emmanuel Van Kerschaver, Jef Poortmans, Robert P. Mertens

Abstract: In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in...

Authors: J. Rappich, X. Zhang, D.M. Rosu, U. Schade, K. Hinrichs

Abstract: We investigated Si surfaces modified by wet-chemical and electrochemical treatments using pulsed photoluminescence (PL) and infrared...


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