Gettering and Defect Engineering in Semiconductor Technology XIII

Volumes 156-158

doi: 10.4028/

Paper Title Page

Authors: Eugene B. Yakimov

Abstract: Simulation of contrast for small spherical defects in the X-ray beam-induced current (XBIC) mode has been carried out. Under simulations the...

Authors: Bernard Pichaud, N. Burle, Michael Texier, C. Fontaine, V.I. Vdovin

Abstract: The nucleation of dislocation in semiconductors is still a matter of debate and especially in heteroepitaxial films. To understand this...

Authors: Jia He Chen, Xiang Yang Ma, De Ren Yang

Abstract: The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping...

Authors: Isabella Mica, Maria Luisa Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza

Abstract: The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at...

Authors: Xiang Yang Ma, Yan Feng, Yu Heng Zeng, De Ren Yang

Abstract: Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to...

Authors: V.G. Litovchenko, I.P. Lisovskyy, M. Voitovych, Andrey V. Sarikov, S.O. Zlobin, V.P. Kladko, V. Machulin

Abstract: In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of...

Authors: Maxim Trushin, O.F. Vyvenko, Teimuraz Mchedlidze, Oleg Kononchuk, Martin Kittler

Abstract: The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are...

Authors: S. Shevchenko, A.N. Tereshchenko

Abstract: We used the DLTS and photoluminescence (PL) techniques to study the deep states due to dislocations and deformation-induced point defects...

Authors: Nikolai Yarykin, Nikolay V. Abrosimov

Abstract: The IR absorption spectra and kinetics of the oxygen solid solution decay were studied in the Si1¡xGex crystals (0 · x · 0:055) plastically...

Authors: Vladimir P. Markevich, Anthony R. Peaker, Stanislav B. Lastovskii, Vasilii E. Gusakov, I.F. Medvedeva, L.I. Murin

Abstract: Defects induced in silicon crystals by irradiations with 6 MeV electrons in the temperature range 60 to 500 oC have been studied by means...


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