Gettering and Defect Engineering in Semiconductor Technology XIII

Volumes 156-158

doi: 10.4028/www.scientific.net/SSP.156-158

Paper Title Page

Authors: L.I. Murin, Bengt Gunnar Svensson, J. Lennart Lindström, Vladimir P. Markevich, Charalamos A. Londos

Abstract: Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the...

129
Authors: Hiroshi Yamada-Kaneta, Hajime Watanabe, Yuta Nagai, Shotaro Baba, Mitsuhiro Akatsu, Yuichi Nemoto, Terutaka Goto

Abstract: We confirm the following findings obtained in our previous experiment for the low-temperature elastic softening by the vacancies in...

135
Authors: O. Caha, J. Kuběna, A. Kuběna, M. Meduňa

Abstract: Successful theoretical models of vacancies, self-interstitials and oxygen dynamics during an ingot growth lead us to apply these models...

139
Authors: Daniel Kropman, E. Mellikov, K. Lott, Tiit Kärner, Ivo Heinmaa, Tony Laas, Arthur Medvid, Wolfgang Skorupa, S. Prucnal, S. Zvyagin, E. Cizmar, M. Ozerov, J. Woznitsa

Abstract: The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its...

145
Authors: Vladimir V. Voronkov, Robert J. Falster, Semih Senkader

Abstract: Out-diffusion nitrogen profiles measured by SIMS after annealing at 850 and 800oC, have a peculiar minimum at a depth of about 5 m. The...

149
Authors: L.F. Makarenko, F.P. Korshunov, Stanislav B. Lastovskii, L.I. Murin, Michael Moll

Abstract: DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been...

155
Authors: A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich

Abstract: In this work we have studied the in-depth distribution of copper deposited on the surface of the hydrogen pre-implanted Cz Si wafers...

161
Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy

Abstract: The influence of platinum contamination on the stability of radiation defects produced by high-energy proton irradiation was investigated...

167
Authors: Nicholas S. Bennett, Chihak Ahn, Nicholas E.B. Cowern, Peter Pichler

Abstract: We present a review of both theoretical and experimental studies of stress effects on the solubility of dopants in silicon and...

173
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii, S.K. Golyk, Nikolay V. Abrosimov, H. Riemann

Abstract: The measurements of stress induced dichroism on oxygen absorption band near 1107 cm-1 in Si1-xGex compounds and subsequent kinetics of the...

181

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