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Vols. 57-58

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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58

Solid State Phenomena Vols. 57-58

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58

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Paper Title Page

Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon

Authors: H. Takahashi, Hiroshi Yamada-Kaneta, Masashi Suezawa

75

A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers

Authors: Mohammad B. Shabani, T. Yoshimi, S. Okuuchi, A. Kaniava

81

Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

Authors: Reinhart Job, Wolfgang R. Fahrner, Alexander G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer

91

Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis

Authors: V.G. Litovchenko, A.A. Efremov, B.N. Romanyuk, V.P. Melnik, Cor Claeys

97

Interaction of Impurities and Dislocations in Silicon before and after External Gettering

Authors: Isabelle Périchaud, Santo Martinuzzi

103

The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers

Authors: M.G. Mil'vidskii, Vladimir V. Voronkov, K.L. Enisherlova, V.Ja. Reznick

109

Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers

Authors: N. Gay, Santo Martinuzzi

115

Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si

Authors: Robert J. Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani

123

Vacancy-Assisted Oxygen Precipitation Phenomena in Si

Authors: Robert J. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob

129

Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers

Authors: Koji Sueoka, M. Akatsuka, H. Katahama, N. Adachi

137

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