Solid State Phenomena
Vol. 111
Vol. 111
Solid State Phenomena
Vol. 110
Vol. 110
Solid State Phenomena
Vols. 108-109
Vols. 108-109
Solid State Phenomena
Vol. 107
Vol. 107
Solid State Phenomena
Vol. 106
Vol. 106
Solid State Phenomena
Vol. 105
Vol. 105
Solid State Phenomena
Vols. 103-104
Vols. 103-104
Solid State Phenomena
Vols. 101-102
Vols. 101-102
Solid State Phenomena
Vols. 99-100
Vols. 99-100
Solid State Phenomena
Vols. 97-98
Vols. 97-98
Solid State Phenomena
Vols. 95-96
Vols. 95-96
Solid State Phenomena
Vol. 94
Vol. 94
Solid State Phenomena
Vol. 93
Vol. 93
Solid State Phenomena Vols. 103-104
Paper Title Page
Abstract: Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.
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