Abstract: In the first part of this paper, the main steps to consider in the build up of a particle measurement method on tool kit parts with a DIW/US protocol have been described. Through that methodology, measurement protocols achieving compromises between cleaning efficiency and minimal substrate erosion can be set up for tool parts. The adhesion problem of particles on a real rough substrate is then discussed solving DLVO theory equations considering physical and chemical analysis on surface and residual particles.

203

Simultaneous Analysis of Light and Heavy Organic Contamination on Silicon Wafer

Authors: Heini Ritala, Simo Eränen, Arto Kiviranta, Jaakko Räsänen, Virpi Tarkiainen, Jari Kiuru, Raimo A. Ketola

209

VPD-DC-TXRF for Metallic Contamination Analysis of Ge Wafers

Authors: David Hellin, V. Geens, I. Teerlinck, Jan Van Steenbergen, Jens Rip, W. Laureyn, G. Raskin, Paul W. Mertens, Stefan De Gendt, Chris Vinckier

213

Cu Spin Cleaning Evaluation by SOR X-Ray Fluorescence Analysis

Authors: Hidekazu Hayashi, Ken Tsugane, Yasushi Kagoshima, Takahisa Koyama, Masaharu Watanabe, Yasushi Kozuki

Abstract: Cu contamination control is critically important in Cu interconnect device manufacturing lines. The frontside gas protected spin cleaning enables the effective removal of the Cu contaminant from the backside and bevel of a wafer. A small area on the bevel was measured for cleaning efficiency using SOR (Synchrotron Orbital Radiation) X-ray fluorescence. The atomic level Cu removal was detected on the bevel surface with the barrier metal Ta existing wafers. The high energy SOR X-ray analysis makes it possible to measure the Cu contamination, where conventional methods do not work.

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