Ultra Clean Processing of Silicon Surfaces VII

Volumes 103-104

doi: 10.4028/www.scientific.net/SSP.103-104

Paper Title Page

Authors: P.D. Matz, R.F. Reidy
Authors: Bo Xie, Anthony Muscat

Abstract: Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane...

Authors: Jerome Daviot, V. Perrut, F. Gaillard, C. Millet, Adrien Danel, Lucile Broussous, Didier Louis
Authors: Y.S. Tan, Simon Y.M. Chooi, Chian-Yuh Sin, Ping-Yu Ee, M.P. Srinivasan, Simo Olavi Pehkonen
Authors: Nicolas Possémé, Thibaut David, P. Meininger, O. Louveau, T. Chevolleau, O. Joubert, Didier Louis
Authors: Qing Yuan Han, Brian White, Ivan L. Berry, Carlo Waldfried, O. Escorcia
Authors: Han Xu, Amy Shen, Vlad Tarasov, Brian White, Josh Wolf
Authors: Els Kesters, Quoc Toan Le, Mikhail R. Baklanov, Werner Boullart, Paul W. Mertens

Abstract: The compatibility of chemical solutions with different pH is studied on microporous silica-based (SiOCH) and mesoporous methylsilsesquioxane...

Authors: Jian She Tang, Brian J. Brown, Steven Verhaverbeke, Han Wen Chen, Jim Papanu, Raymond Hung, Cathy Cai, Dennis Yost

Abstract: As device features scale down to 90nm and Cu/low-k films are employed for back end interconnects, post etch and ash residue cleaning becomes...

Authors: B.G. Sharma, Chris Prindle

Abstract: Interconnect RC delay is the limiting factor for device performance in submicron semiconductor technology. Copper and low-k dielectric...


Showing 71 to 80 of 87 Paper Titles