Authors: Chris Sparks, Joel Barnett, Diane K. Michelson, Carolyn Gondran, Seung Chul Song, Angela Martinez, Hikari Takahara, Hiroyuki Murakami, Toru Kinashi

285

Novel Full Wafer Inspection Technology for Non-Visual Residue Defects

Authors: Robert Bryant, Joel Hickson, Jeff Hawthorne

289

A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing

Authors: Ja Hyung Han, Ja Eung Koo, Kyo Se Choi, Byung Lyul Park, Ju Hyuk Chung, Sang Rok Hah, Sun Yong Lee, Young Jae Kang, Jin Goo Park

Abstract: The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during Cu/low-k CMP is suggested and its prevention methods are proposed in this study. A suitable surfactant treatment can improve the wettability of low-k films and reduce the watermark defects very effectively. The relatively stable low-k film surface is activated during polishing and prone to adsorb surfactant molecules during cleaning, which results in the reduction of water-marks after CMP. Another solution to eliminate water-mark is the application of IPA dryer in post CMP cleaning.

295

Effect of an Organic Inhibitor in High pH Chemical Rinse on the Platen for Cu-CMP

Authors: Sébastien Petitdidier, Kyle Bartosh, Chantal Trouiller, Alexandre Couvrat, Jun Liu, Mark Zaleski

299