Applied Mechanics and Materials Vols. 110-116

Abstract: Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); XRD studies of the annealed films indicate the presence of CuInSi, a peak at about 2θ=42.400°. The morphology of the film surface was studied by SEM. The nanocrystallization with needle shape of CuInSi could be seen clearly. The grain size is a few hundred angstroms.

Abstract: the term "nanomotors" refers macromolecules that consume energy in order to perform certain specific cations. nanomachines could play a major role in the future of electronics, medicine and communications. The sulfoxide (1) was prepared by reaction p-cresol with SOCl2 in 65%, bisphonle (2) was prepared with reduction compound (1). Treatment of bisphenole (2) with methyl chloroacetate at refluxed gave dimethyl ester (3) in 98% yield. Macrocycle (4) in 70% yield was prepared by diamidation of diester (3) with diethylentriamine, Lariat ethers (5) and (6) were synthesized by reaction of macrocyle (4) with decasanoylechloride and ecasonoylechloride in 49% and 45% yield.

Abstract: This paper deals with the fixed point and hyper order of solutions of nonhomogeneous higher order linear differential equations with meromorphic function coefficent, and gets two results of fixed point and hyper order of homogeneous higher order linear differenliad equations.Moreover,we generalize the related results of some authors.

Abstract: In producing thin wall ductile iron (TWDI) cooling rate must be strictly maintaned to prevent carbide formation. There are many ways to control cooling rate and one of these is through casting design, especially gating system design. This paper discusses the possibility to produce 1 mm TWDI plate and also to note the effect of gating system design to microstructure and mechanical properties. Casting design based on gating system design are made to produce 1 mm TWDI plate. The 1 mm TWDI plates will be used for fin. There are three design and coded as T1, T2, and T3. The moulds used were made from furan sand. Beside the experiment, casting design simulation with Z-Cast was also conducted to ensure the completion of producing 1 mm TWDI plate. Simulation result showed that all designs could produce 1 mm TWDI plate. Result from experiment showed that all the designs have microstructure consisting of nodule graphite in ferrite matrix and carbide. Apart from mentioned microstructure there is also skin effect. The difference between all designs lies in carbide content and skin effect width. All the nodularity exceeded 80% and nodule count exceeded 1000 nodule/mm². Brinell hardness number for all design exceeded minimal standard given by JIG G5502. As for UTS only T2 design can exceed the minimal standard. There is a contradictive result between experiment and simulation in cooling rate.

Abstract: The standard Early voltage of the SPICE Gummel-Poon model (SGP) is generalized for SiGe npn heterojunction bipolar transistors (HBTs). An accurate model for Early effects compatible with the SGP model is obtained considering graded germanium induced bandgap narrowing effect in the base in modern SiGe HBTs and simplified to a compact model which is consistent with ISE TCAD simulation results. The presentation of the Early effect model is significant for the design and simulation of the high performance SiGe BiCMOS technology.

Abstract: We define a quantum spectrum function using the eigenvalues and the eigenfunctions in the system of two-dimensional artificial atom. We find that the Fourier transform of the quantum spectrum function reveals a lot of information of the classical closed orbits and the classical opened orbits from one point to another. These results give new evidence about the classical-quantum correspondence.

Abstract: In this paper, invariance under rotation for the first-order and second-order spatial dispersion properties of the elastic constants was researched based on group theory. Softwares for calculating and judging invariance under arbitrary rotation of various order spatial dispersion tensors of the elastic constants were programmed by means of Mat lab. With the help of the softwares which we programmed, the general forms of the first-order and second-order spatial dispersion tensors of the elastic constants which belong to the group SO (2) were got, and it is judged that the above tensors of crystals or quasicrystals which have some degree axis of rotation had invariance under arbitrary rotation about the corresponding axes of rotation. The results were of importance to theoretical and experimental research for higher order spatial dispersion effects of the elastic constants.

Abstract: The storage spaces of carbonate reservoir are complicated, matrix pores, vugs, fractures and large caves are coexistence. Traditional numerical simulation methods have harsh requirement for geology model and computing method, these methods are not suitable for carbonate reservoir. A comparatively perfect equivalent permeability and porosity model for multi-media reservoir was developed based on the theory of equivalent continuum media and the law of equivalent seepage resistance. The equivalent parameters of a practical reservoir were calculated by this model, and a numerical simulation was carried out by using these parameters, the results showed that the equivalent numerical simulation of fractured-vuggy carbonate reservoir was reasonable.

Abstract: A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

Abstract: Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.