Solid State Phenomena Vol. 134

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134

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Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)

Authors: Heike Angermann, J. Rappich

Surface Microroughness of Silicon in Wet Process and its Minimization

Authors: Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi

Oxidation of Si Surface Utilizing SCCO₂

Authors: K. Saito, T. Kitajima, M. Kohno, I. Mizobata, T. Iwata, S. Hirae

Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer

Authors: Kenichi Sano, Akira Izumi, Atsuro Eitoku, James Snow, L. Nyns, S. Kubicek, R. Singanamalla, O. Richard, Thierry Conard, Rita Vos, Paul W. Mertens

Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O₃/TEOS CVD

Authors: Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park

Abstract: The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD.

Etch Rate Profile Characterization of High-κ Materials

Authors: Annamaria Votta, Enrico Bellandi, Rosella Piagge, Massimo Caniatti, Francesco Pipia, Mauro Alessandri

Critical Thickness Threshold in HfO₂ Layers

Authors: Pascal Besson, Virginie Loup, Thierry Salvetat, Névine Rochat, Sandrine Lhostis, Sylvie Favier, Karen Dabertrand, Vincent Cosnier

Surface Preparation Challenge on Nitrided Gate Oxides

Authors: Philippe Garnier, David Barge, Jerome Bienacel, Brice Tavel, Nicolas Cabuil, Didier Lévy, Kathy Barla

Development of a New TaN Etchant for Metal Gate

Authors: Mong Sup Lee, Sang Yong Kim, Ji Hoon Cha, Jeong Nam Han, Im Soo Park, Kuntack Lee, Chang Ki Hong, Han Ku Cho, Joo Tae Moon

Peracetic Acid as Active Species in Mixtures for Selective Etching of SiGe/Si Layer Systems – Aspects of Chemistry and Analytics

Authors: Mathias Guder, Bernd O. Kolbesen, Cécile Delattre, C. Fischer, H. Schier, Gerald Wagner