Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Srihari Rajgopal, Daniel Zula, Steven Garverick, Mehran Mehregany

Abstract: A polycrystalline silicon carbide (poly-SiC) surface-micromachined capacitive accelerometer is designed, fabricated and tested. Leveraging...

Authors: Li Chen, Mehran Mehregany

Abstract: Micro-hotplate platforms, including the heating and sensing resistors, are fabricated by surface micromachining techniques from...

Authors: Gwiy Sang Chung, Ki Bong Han

Abstract: This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10 % carrier gas (H2) concentrations using...

Authors: J.H. Leach, Hadis Morkoç, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke

Abstract: Columnar porous Si-face 6H-SiC substrates were prepared by a photo-electrochemical etching method and applied as nanoimprint lithography...

Authors: Gwiy Sang Chung, Chang Min Ohn

Abstract: This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally...

Authors: Takuro Tomita, Ryota Kumai, Keita Kinoshita, Shigeki Matsuo, Shuichi Hashimoto, Hirokazu Nagase, Makoto Nakajima, T. Suemoto
Authors: Hiroyuki Kawahara, Tatsuya Okada, Ryota Kumai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi

Abstract: We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC...

Authors: Anant K. Agarwal, Albert A. Burk, Robert Callanan, Craig Capell, Mrinal K. Das, Sarah K. Haney, Brett A. Hull, Charlotte Jonas, Michael J. O'Loughlin, Michael O`Neil, John W. Palmour, Adrian R. Powell, Jim Richmond, Sei Hyung Ryu, Robert E. Stahlbush, Joseph J. Sumakeris, Q. Jon Zhang

Abstract: In this paper, we review the state of the art of SiC switches and the technical issues which remain. Specifically, we will review the...

Authors: Kathrin Rueschenschmidt, Michael Treu, Roland Rupp, Peter Friedrichs, Rudolf Elpelt, Dethard Peters, Peter Blaschitz

Abstract: Today a main focus in high efficiency power electronics based on silicon carbide (SiC) lies on the development of an unipolar SiC switch....


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