Paper Title
Authors: Ruby N. Ghosh, Reza Loloee, Tamara Isaacs-Smith, John R. Williams
Abstract:The operation of metal-oxide-semiconductor (MOS) devices based on the semiconductor SiC in high temperature environments above 300 °C...
Authors: Daniel B. Habersat, Aivars J. Lelis, J.M. McGarrity, F. Barry McLean, Siddharth Potbhare
Abstract:We have analyzed the effect of post-oxidation nitride anneals (usually with either NO or N2O gases) on SiC MOSFETs. Two 4H:SiC wafers were...
Authors: Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
Abstract:This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping...
Authors: Y. Wang, T. Khan, T. Paul Chow
Abstract:The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using...
Authors: Fredrik Allerstam, Einar Ö. Sveinbjörnsson
Abstract:This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face...
Authors: Rajat Mahapatra, Alton B. Horsfall, Nicolas G. Wright
Abstract:In this study we report interface and carrier transport behaviour in Al/HfO2/SiO2/SiC MIS structure. The density of the interface states...
Authors: M. Wolborski, D.M. Martin, Mietek Bakowski, Anders Hallén, Ilia Katardjiev
Abstract:Aluminium oxynitride (AlON) films of variable composition were grown by reactive sputter deposition in a N2/O2 ambient at room temperature...
Authors: Ulrike Grossner, Marc Avice, Spyros Diplas, Annett Thøgersen, Jens S. Christensen, Bengt Gunnar Svensson, Ola Nilsen, Helmer Fjellvåg, John F. Watts
Authors: Ming Hung Weng, Rajat Mahapatra, Nicolas G. Wright, Alton B. Horsfall
Abstract:The interface properties of TiO2/SiO2/SiC metal-insulator-semiconductor (MIS) capacitors were investigated by C-V and G-V measurements over...
Authors: Stanislav I. Soloviev, Kevin Matocha, Greg Dunne, Zachary Stum
Abstract:In this work, the correlation between thermal oxide breakdown and dislocations in n-type 4H-SiC epitaxial wafers has been investigated....
Showing 181 to 190 of 330 Paper Titles