Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Abstract: We report investigations on the fabrication and electrical characterization in the range 27°C -290 °C of normally off 4H-SiC circular...

Authors: Shigeomi Hishiki, Sergey A. Reshanov, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl

Abstract: N-channel MOSFETs are irradiated with gamma-rays (g-rays) up to 3.16 MGy(SiO2) at room temperature. Above 1 MGy, the effective channel...

Authors: Shigeomi Hishiki, Naoya Iwamoto, Takeshi Ohshima, Hisayoshi Itoh, Kazu Kojima, K. Kawano

Abstract: The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post...

Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...

Authors: Aveek Chatterjee, Asha Bhat, Kevin Matocha

Abstract: We have identified the crystal planes of 4H-SiC, interfacing with gate oxide, which will lead to minimum defect density and lowest...

Authors: Corey J. Cochrane, Patrick M. Lenahan, Aivars J. Lelis

Abstract: We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line...

Authors: Jan M. Knaup, Peter Deák, Thomas Frauenheim

Abstract: Recently, Wang et. al. formulated a criterion for identifying the source of deep interface sates at the SiC/SiO2 interface, based on the...

Authors: Svetlana Beljakowa, Michael Krieger, Thomas Frank, Gerhard Pensl, Lia Trapaidze, Naoki Hatta, Masayuki Abe, Hiroyuki Nagasawa, Adolf Schöner

Abstract: 3C-SiC/SiO2-capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance...

Authors: Jeong Hyun Moon, Kuan Yew Cheong, Ho Keun Song, Jeong Hyuk Yim, Myeong Sook Oh, Jong Ho Lee, Wook Bahng, Nam Kyun Kim, Hyeong Joon Kim

Abstract: We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post...

Authors: Shinji Nakagomi, Kenta Sato, Shun Suzuki, Yoshihiro Kokubun

Abstract: A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxial layer, and the interface state was evaluated in oxygen...


Showing 171 to 180 of 330 Paper Titles