Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Mikhael Bechelany, Gabriel Ferro, Jacques Dazord, David Cornu, Philippe Miele

Abstract: The formation of dots by CVD in the hetero-system SiC-Si was studied in the two possible ways : Si dots on SiC substrate and SiC dots on Si...

Authors: A. Miranda, A. Estrella Ramos, M. Cruz Irisson

Abstract: In this work, the effects of the diameter and morphology on the electronic band structure of hydrogenated cubic silicon carbide (b-SiC)...

Authors: Konstantinos Rogdakis, Marc Bescond, Edwige Bano, Konstantinos Zekentes

Abstract: 3C-SiC is a promising material for high power and high-speed electronic devices as well as in sensors operating at high temperatures or...

Authors: Ryo Hattori, Tomokatsu Watanabe, T. Mitani, Hiroaki Sumitani, Tatsuo Oomori

Abstract: Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated....

Authors: Toshiharu Ohnuma, Atsumi Miyashita, Misako Iwasawa, Masahito Yoshikawa, Hidekazu Tsuchida

Abstract: We perform a dynamical simulation of the SiO2/4H-SiC C-face interface oxidation process at 2500K using first-principles molecular dynamics...

Authors: Michael Grieb, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Heiner Ryssel

Abstract: The reliability of thermal oxides grown on n-type 4H-SiC C(000-1) face wafer has been investigated. In order to examine the influence of...

Authors: Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Abstract: In the present work, we systematically studied the effect of the annealing temperature (from 1400 °C to 1650 °C) on the electrical...

Authors: Kazuhiro Mochizuki, Hidekatsu Onose

Abstract: We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage...

Authors: Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda

Abstract: Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching...

Authors: Takeshi Mitani, Ryo Hattori, Masanobu Yoshikawa

Abstract: Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that...


Showing 141 to 150 of 330 Paper Titles