Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/www.scientific.net/MSF.600-603

Paper Title Page

Authors: Nada Habka, Veronique Soulière, Jean Marie Bluet, Maher Soueidan, Gabriel Ferro, Bilal Nsouli

Abstract: We report an optical study of 3C-SiC layers grown on 6H-SiC substrates by VLS mechanism using a Si-Ge melt. The photoluminescence and...

529
Authors: Richard Nader, Michel Kazan, E. Moussaed, Charbel Zgheib, Bilal Nsouli, Jörg Pezoldt, Pierre M. Masri

Abstract: In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This...

533
Authors: Alexander A. Lebedev, M. Lemmer, B. Hilling, M. Wohlecke, Mirco Imlau, V.V. Bryksin, M. Petrov

Abstract: Resonant excitation of space charge waves (SCW) by means of an oscillating light pattern has been investigated in hexagonal silicon carbide...

537
Authors: Alexander A. Lebedev, Pavel L. Abramov, Nina V. Agrinskaya, Ven I. Kozub, Alexey N. Kuznetsov, Sergey P. Lebedev, Gagik A. Oganesyan, L.M. Sorokin, A.V. Chernyaev, Dmitrii Shamshur

Abstract: 3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC substrates. It was done investigation of magneto...

541
Authors: H. Isono, Michio Tajima, Norihiro Hoshino, H. Sugimoto

Abstract: We demonstrated the rapid and nondestructive observation of structural defects in SiC wafers by full-wafer photoluminescence (PL) imaging...

545
Authors: Yi Chen, R. Balaji, Michael Dudley, Madhu Murthy, Serguei I. Maximenko, Jaime A. Freitas

Abstract: Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and...

549
Authors: Tetsuo Hatakeyama, Kyoichi Ichinoseki, N. Higuchi, Kenji Fukuda, Kazuo Arai

Abstract: There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of...

553
Authors: Stefan Mueller, Rudolf Stibal, Wolfgang Jantz

Abstract: Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material,...

557
Authors: Christian Riedl, J. Bernardt, K. Heinz, Ulrich Starke

Abstract: The evolution and structure of graphene layers on 4H-SiC(0001) and the corresponding interface are investigated by scanning tunneling...

563
Authors: Jonas Röhrl, Martin Hundhausen, Konstantin V. Emtsev, Thomas Seyller, Lothar Ley

Abstract: We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon...

567

Showing 131 to 140 of 330 Paper Titles