Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Paul B. Klein, Joshua D. Caldwell, Amitesh Shrivastava, Tangali S. Sudarshan

Abstract: The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n-...

Authors: Dorothea Werber, Martin Aigner, D. Denoth, F. Wittmann, Gerhard Wachutka

Abstract: We present an experimental equipment for studying the charge carrier distribution in the interior of bipolar 4H-SiC high power devices by...

Authors: Hideyuki Tsuboi, Megumi Kabasawa, Seika Ouchi, Miki Sato, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoj Kubo, Carlos A. Del Carpio, Yasuo Kito, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto

Abstract: The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down...

Authors: T. Kitamura, Shinichi Nakashima, Tomohisa Kato, K. Kojima, Hajime Okumura

Abstract: We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering...

Authors: Gwiy Sang Chung, Jun Ho Jeong

Abstract: This paper presents the Raman scattering characteristics of poly 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure...

Authors: K. Neimontas, Kęstutis Jarašiūnas, Rositza Yakimova, Mikael Syväjärvi, Gabriel Ferro

Abstract: We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC...

Authors: Vladimir Ilich Sankin, Pavel P. Shkrebiy, Alla A. Lepneva, M.S. Ramm

Abstract: A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads...

Authors: Matthias Stockmeier, Sakwe Aloysius Sakwe, Philip Hens, Peter J. Wellmann, Rainer Hock, Andreas Magerl

Abstract: The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice...

Authors: Passapong Wutimakun, Hisashi Miyazaki, Yoichi Okamoto, Jun Morimoto, Toshihiko Hayashi, Hiromu Shiomi

Abstract: Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by the PPE method. The thermal diffusivities of the [1-100]...

Authors: Laurent Ottaviani, Michel Kazan, Pierre M. Masri, Thierry Sauvage

Abstract: Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A...


Showing 121 to 130 of 330 Paper Titles