Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/www.scientific.net/MSF.600-603

Paper Title Page

Authors: Tomoaki Hatayama, T. Shimizu, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Abstract: Anisotropic thermal etching of 4H-SiC {0001} and {11-20} substrates was studied in the mixed gas of chlorine (Cl2) and oxygen (O2) over...

659
Authors: Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi, Sadafumi Yoshida

Abstract: To explain the growth rate enhancement of SiC oxidation in the thin oxide regime, which was recently found from the real time monitoring...

663
Authors: Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Abstract: Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation were performed using an in-situ ellipsometer over the...

667
Authors: Hirofumi Matsuhata, Junji Senzaki, Ichiro Nagai, Hirotaka Yamaguchi

Abstract: The SiO2/4H-SiC hetero-interface was observed using TEM in plan-view geometry. Local roughening of the SiO2/4H-SiC hetero-interface...

671
Authors: Shinsuke Harada, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai

Abstract: 4H-SiC MOSFET on carbon face exhibits the high channel mobility when the gate oxide is formed by pyrogenic wet oxidation. However, this...

675
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto

Abstract: Deposited SiN/SiO2 stack gate structures have been investigated to improve the 4H-SiC MOS interface quality. Capacitance-voltage...

679
Authors: Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu

Abstract: 4H-SiC MOSFETs with Al2O3/SiC and Al2O3/SiOx/SiC gate structures have been fabricated and characterized. Al2O3 was deposited by...

683
Authors: Vinayak Tilak, Kevin Matocha, Greg Dunne, Fredrik Allerstam, Einar Ö. Sveinbjörnsson

Abstract: The improvement of the SiC-SiO2 interface has been the main focus of research in SiC MOSFET technology due to the presence of high density...

687
Authors: Takeshi Endo, Eiichi Okuno, Toshio Sakakibara, Shoichi Onda

Abstract: We studied the annealing process to improve the field-effect channel mobility (μFE) on the 4H-SiC (11-20) face. We found that wet...

691
Authors: Takeyoshi Masuda, Shin Harada, Takashi Tsuno, Yasuo Namikawa, Tsunenobu Kimoto

Abstract: Improvement of the channel mobility is needed in 4H-SiC MOSFETs for the maximum utilization of the material potential for novel power...

695

Showing 161 to 170 of 330 Paper Titles