Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/www.scientific.net/MSF.600-603

Paper Title Page

Authors: Junji Senzaki, Atsushi Shimozato, Kenji Fukuda, Kazuo Arai

Abstract: Reliability of thermal oxides grown on the n-type 4H-SiC substrates implanted by nitrogen ion with low doping levels equal to or less than...

779
Authors: Tetsuo Hatakeyama, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, Hirofumi Matsuhata, Takashi Shinohe, Kazuo Arai

Abstract: We report on the reliability of the gate oxide on C-face of 4H-SiC. Constant current stress TDDB measurement shows that QBD of the gate...

783
Authors: Junji Senzaki, Atsushi Shimozato, Mitsuo Okamoto, Kazutoshi Kojima, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of...

787
Authors: Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

Abstract: The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face...

791
Authors: Satoshi Tanimoto, Tatsuhiro Suzuki, Shigeharu Yamagami, Hideaki Tanaka, Tetsuya Hayashi, Yukie Hirose, Masakatsu Hoshi

Abstract: It was experimentally shown that an ONO gate dielectric carefully formed on 4H-SiC has extremely high reliability even under a negative...

795
Authors: Keiko Fujihira, Shohei Yoshida, Naruhisa Miura, Yukiyasu Nakao, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Oomori

Abstract: The reliability of CVD gate oxide was investigated by CCS-TDDB measurement and compared with thermally grown gate oxide. Although the QBD...

799
Authors: John Rozen, Sarit Dhar, San Wu Wang, Valeri V. Afanas'ev, Sokrates T. Pantelides, John R. Williams, Leonard C. Feldman

Abstract: We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe...

803
Authors: Aivars J. Lelis, Daniel B. Habersat, Ronald Green, Neil Goldsman

Abstract: We have observed variations in the instability in the threshold voltage, VT, of SiC metaloxide semiconductor field-effect transistors...

807
Authors: Jo Lene Tan, Kuan Yew Cheong, Rusli

Abstract: Physical and electrical properties of sol-gel derived SiO2 thick film (100-130 nm) deposited on n-type 4H-SiC have been investigated. The...

811
Authors: Junji Murata, Akihisa Kubota, Keita Yagi, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, Takeshi Okamoto, Hidekazu Mimura, Kazuto Yamauchi

Abstract: A novel chemical planarization method was developed for silicon carbide (SiC) and gallium nitride (GaN). This method uses catalytically...

815

Showing 191 to 200 of 330 Paper Titles