Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto

Abstract: A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly...

Authors: Tomokatsu Watanabe, Yukiyasu Nakao, Keiko Fujihira, Naruhisa Miura, Yoichiro Tarui, Masayuki Imaizumi, Tatsuo Oomori

Abstract: A major crystalline defect which causes a pn junction reverse leakage current has been identified. A faintish stripe defect (FSD), the main...

Authors: Peter A. Losee, Y. Wang, Can Hua Li, Santosh K. Sharma, I. Bhat, T. Paul Chow, Ronald J. Gutmann

Abstract: The impact of anode layers on the electrical characteristics of 10kV 4H-SiC PiN diodes has been evaluated in this work. Co-fabricated...

Authors: Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

Abstract: Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and theoretically in dc and 8-ms single pulse modes. To...

Authors: H. Vang, Sigo Scharnholz, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Dominique Planson

Abstract: This paper presents a comparison of the reverse characteristics of mesa terminated PiN diodes fabricated on n- and p-type 4H-SiC...

Authors: Ryosuke Ishii, Koji Nakayama, Hidekazu Tsuchida, Yoshitaka Sugawara

Abstract: This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4...

Authors: Konstantinos Zekentes, Volodymyr V. Basanets, Mykola S. Boltovets, Valentyn A. Kryvutsa, Volodymyr O. Orechovskij, Vasyl I. Simonchuk, Alexander V. Zorenko, Leonid P. Romanov, Aleksey V. Kirillov, Edwige Bano, Nicolas Camara

Abstract: Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode...

Authors: Masataka Satoh, Shingo Miyagawa, T. Kudoh, Akihiro Egami, Kenji Numajiri, Masami Shibagaki

Abstract: The I-V characteristics of p+n 4H-SiC diode formed by Al ion implantation have been investigated as a function of annealing temperature. Al...

Authors: Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Abstract: The current-voltage characteristics of Al+ implanted 4H-SiC p+n junctions show an important reduction of leakage currents with diode aging...

Authors: Tarek Ben Salah, Samien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, Dominique Planson, Hervé Morel

Abstract: A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters...


Showing 241 to 250 of 330 Paper Titles