Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/www.scientific.net/MSF.600-603

Paper Title Page

Authors: Kenya Yamashita, Kyoko Egashira, Koichi Hashimoto, Kunimasa Takahashi, Osamu Kusumoto, Kazuya Utsunomiya, Masashi Hayashi, Masao Uchida, Chiaki Kudo, Makoto Kitabatake, Shin Hashimoto

Abstract: In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown...

1115
Authors: Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda

Abstract: We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling...

1119
Authors: Yukiyasu Nakao, Shoyu Watanabe, Naruhisa Miura, Masayuki Imaizumi, Tatsuo Oomori

Abstract: The shout-circuit ruggedness of prototype 1.2kV SiC MOSFETs has been investigated. The short-circuit measurements were carried out at 25 °C...

1123
Authors: Sei Hyung Ryu, Fatima Husna, Sarah K. Haney, Qing Chun Jon Zhang, Robert E. Stahlbush, Anant K. Agarwal

Abstract: This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high...

1127
Authors: Kevin Matocha, Zachary Stum, Steve Arthur, Greg Dunne, Ljubisa Stevanovic

Abstract: SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4...

1131
Authors: Ronald Green, Aderinto Ogunniyi, Dimeji Ibitayo, Gail Koebke, Mark Morgenstern, Aivars J. Lelis, Corey Dickens, Brett A. Hull

Abstract: In this paper, large area (0.18cm2) SiC DMOSFETs with 1.2 kV and 20 A rating are evaluated for power electronic switching applications. A...

1135
Authors: Ginger G. Walden, Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh, Rob Howell

Abstract: For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt...

1139
Authors: Tomohiro Tamaki, Ginger G. Walden, Yang Sui, James A. Cooper

Abstract: We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional...

1143
Authors: Marko J. Tadjer, Karl D. Hobart, Eugene A. Imhoff, Fritz J. Kub

Abstract: Threshold voltage (Vth) was measured on 4H-SiC power DMOSFET devices as a function of temperature, gate stress, and gate stress time. Vth...

1147
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson

Abstract: This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60...

1151

Showing 271 to 280 of 330 Paper Titles