Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao

Abstract: This paper reports a newly achieved best result on the common emitter current gain of 4H-SiC high power bipolar junction transistors...

Authors: Q. Jon Zhang, Charlotte Jonas, Albert A. Burk, Craig Capell, Jonathan Young, Robert Callanan, Anant K. Agarwal, John W. Palmour, Bruce Geil, Charles Scozzie

Abstract: 4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a...

Authors: Chih Fang Huang, Chien Yuen Tseng

Abstract: This paper presents a simulation study on the thermal effects in 4H-SiC NPN BJTs. Simulation results show several important effects on the...

Authors: Steven L. Kaplan, Aderinto Ogunniyi

Abstract: Continued improvement in silicon carbide (SiC) material processing has allowed development of efficient high temperature devices which are...

Authors: K.G.P. Eriksson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling

Abstract: To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction...

Authors: Koji Nakayama, Yoshitaka Sugawara, Yoichi Miyanagi, Katsunori Asano, Shuuji Ogata, Shinichi Okada, Toru Izumi, Atsushi Tanaka

Abstract: The behavior of stacking faults with regard to Vf degradations and TEDREC phenomena for 4.5 kV SiCGT have been investigated through the use...

Authors: Yoshitaka Sugawara, Shuuji Ogata, Yoichi Miyanagi, Katsunori Asano, Shinichi Okada, Atsushi Tanaka, Koji Nakayama, Toru Izumi

Abstract: To reduce the switching power losses of SiC bipolar devices, an electron irradiation lifetime control method was investigated and was...

Authors: Mrinal K. Das, Q. Jon Zhang, Robert Callanan, Craig Capell, Jack Clayton, Matthew Donofrio, Sarah K. Haney, Fatima Husna, Charlotte Jonas, Jim Richmond, Joseph J. Sumakeris

Abstract: For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the...

Authors: Q. Jon Zhang, Charlotte Jonas, Joseph J. Sumakeris, Anant K. Agarwal, John W. Palmour

Abstract: DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V...

Authors: Yang Sui, James A. Cooper, X. Wang, Ginger G. Walden

Abstract: We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the...


Showing 281 to 290 of 330 Paper Titles