Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Gi Sub Lee, Myung Ok Kyun, Hyun Hee Hwang, Joon Ho An, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino

Abstract: A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce AlN epitaxial layers. In this study,...

Authors: Gwiy Sang Chung, Tae Won Lee

Abstract: Aluminum nitride thin films were deposited on polycrystalline 3C-SiC intermediate layer by pulsed reactive magnetron sputtering system....

Authors: T. Kitamura, Shinichi Nakashima, Hajime Okumura

Abstract: We characterized the HVPE grown freestanding GaN crystals with various shallow impurity concentrations by Raman scattering spectroscopy....

Authors: Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi

Abstract: Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two...

Authors: Kęstutis Jarašiūnas, T. Malinauskas, R. Aleksiejunas, Bo Monemar, V. Ralchenko, A. Gontar, E. Ivakin

Abstract: Defect related carrier recombination and transport properties have been investigated in differently doped HVPE GaN substrates and CVD...

Authors: Masanobu Yoshikawa, Masataka Murakami, Takaya Fujita, K. Inoue, K. Matsuda, H. Ishida, Hiroshi Harima

Abstract: We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level,...

Authors: Takaya Fujita, Takeshi Mitani, Masataka Murakami, Masanobu Yoshikawa, Hiroshi Harima

Abstract: We have studied InGaN single-quantum-well (SQW) films using atomic force microscopy (AFM) and cathodoluminescence (CL) spectroscopy. It has...

Authors: Zhe Chuan Feng, C. Tran, Ian T. Ferguson, J.H. Zhao

Abstract: Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition...

Authors: Toshiyuki Isshiki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, Hideo Nakanishi

Abstract: Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211)...

Authors: Seikoh Yoshida, Mitsuru Masuda, Yuki Niiyama, Jiang Li, Nariaki Ikeda, Takehiko Nomura

Abstract: We report on the 288 V-10 V DC- DC converter circuit using AlGaN/GaN HFETs for the first time. The AlGaN/GaN HFET with a large current and...


Showing 311 to 320 of 330 Paper Titles